FP40R12KE3G
Description of FP40R12KE3G product: "Automotive-grade N-channel IGBT module with a voltage rating of 1200V and a current rating of 55A
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $262.139 | $262.14 |
200 | $101.444 | $20,288.80 |
500 | $97.880 | $48,940.00 |
1000 | $96.117 | $96,117.00 |
在庫:8,135
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FP40R12KE3G
-
パッケージ/ケース : EconoPIM 3-35
-
Brand : Infineon
-
Components Classification : IGBT Modules
-
日付シート : FP40R12KE3G データシート (PDF)
概要 FP40R12KE3G
The FP40R12KE3G is a cutting-edge IGBT module that is perfect for industrial applications requiring high power conversion systems. With a maximum collector-emitter voltage of 1200V and a maximum collector current of 75A, this module can handle heavy loads with minimal losses, ensuring optimal efficiency. Its low inductive design and the incorporation of freewheeling diodes enable improved switching performance and thermal management, making it a reliable choice for demanding environments
主な特長
- Advanced power electronics
- Efficient motor control
- Smart grid solutions
- Renewable energy integration
- High-density packaging
- Real-time monitoring
応用
- Smart motor drives
- Efficient power supplies
- Advanced energy systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
IC max | 40.0 A | Housing | EconoPIM™ 3 |
Qualification | Industrial | Technology | IGBT3 - E3 |
Voltage Class max | 1200.0 V | Features | Solder pin |
Configuration | PIM |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IRFP054NPBF
MOSFET N-Channel 55V 81A TO247AC International Rectifier IRFP054NPBF N-channel MOSFET Transistor, 81 A, 55 V, 3-Pin TO-247AC
IRFP4227PBF
Part number IRFP4227PBF
STP6NK90ZFP
N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A
AUIRFP4568
Automotive N-channel Silicon Transistor, 150 Volts, 171 Amps, TO-247AC Package
BFP420H6327XTSA1
The BFP420H6327XTSA1 by Infineon is an NPN RF Bipolar Transistor, capable of handling currents up to 60 mA and voltages up to 15 V
BFP780H6327XTSA1
RF Amplifier RF BIP TRANSISTORS
IRFP7430PBF
40V MOSFET capable of handling 195A
IRFP7718PBF
N-MOSFET transistor with a unipolar design, capable of handling 75V and 355A with a power rating of 517W, in a TO247AC package
IRFPS3810PBF
pin configuration with tab for easy installation and connection
IRFPS40N50L
IRFPS40N50L N-Channel MOSFET Transistor, 46 A, 500 V HEXFET, 3-Pin Super-247 International Rectifier
NX7002AKW,115
Field-effect transistor NX7002AKW/SOT323/SC-70
ZVP2106G
0.45A I(D), 60V, 5ohm, 1-Element
NE3210S01-T1B
NE3210S01-T1B: A high-performance Trans JFET with a 4V voltage rating and a current capacity of 70mA
BC848B,215
General Purpose SMT NPN Transistor from BC848 Series, Operating at 30 Volts and 100 Milliamps
SI7386DP-T1-E3
Low on-resistance of 7mΩ at 10V for efficient operation
ATF-50189-BLK
1 A Current Rating
BCP68T1G
BCP68T1G stands as a Bipolar Transistor with NPN configuration, adept at handling currents up to 1A and voltages up to 20V
IRF840SPBF
Power MOSFET designed for switching applications with a maximum voltage of 500V
AON7400B
0V 40A Power Transistor
IRF2907ZPBF
IRF2907ZPBF MOSFET N-channel TO-220 75V 170A