FQB34P10TM
With a voltage rating of -100V and a current rating of -33
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部品番号 : FQB34P10TM
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パッケージ/ケース : D2PAK-3
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Brand : Onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FQB34P10TM データシート (PDF)
概要 FQB34P10TM
Fairchild Semiconductor's FQB34P10TM MOSFET is a standout choice for engineers and designers seeking high-performance power transistors for their projects. Boasting a proprietary planar stripe and DMOS technology, this MOSFET delivers exceptional on-state resistance reduction and robust switching performance. Its enhanced avalanche energy strength makes it suitable for applications that demand reliable and efficient power management, such as switched mode power supplies and audio amplifiers. Trust in the FQB34P10TM MOSFET for your power control needs
主な特長
- Low gate charge ( Typ. 85nC)
- 100% avalanche tested
- Low Crss ( Typ. 170pF)
- 175°C maximum junction temperature rating
- -33.5A, -100V, RDS(on) = 60mΩ(Max.) @VGS = -10 V, ID = -16.75A
応用
- Durable construction
- High-end components
- Seamless integration
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | D2PAK-3 / TO-263-2 | Case Outline | 418AJ |
| MSL Type | 1 | MSL Temp (°C) | 245 |
| Container Type | REEL | Container Qty. | 800 |
| ON Target | Y | Channel Polarity | P-Channel |
| Configuration | Single | V(BR)DSS Min (V) | -100 |
| VGS Max (V) | ±30 | VGS(th) Max (V) | -4 |
| ID Max (A) | -33.5 | PD Max (W) | 155 |
| RDS(on) Max @ VGS = 10 V (mΩ) | 60 | Qg Typ @ VGS = 10 V (nC) | 85 |
| Ciss Typ (pF) | 2240 | Pricing ($/Unit) | $1.3664Sample |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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