FGH40N60UFDTU
IGBT Transistor Chip, N-Type, 600V, 80A, 290W, 3-Pin (3+Tab), TO-247 Tube
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部品番号 : FGH40N60UFDTU
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パッケージ/ケース : TO247-3
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ブランド : Onsemi
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コンポーネントの分類 : Single IGBTs
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日付シート : FGH40N60UFDTU データシート (PDF)
概要 FGH40N60UFDTU
Meet the FGH40N60UFDTU IGBT transistor – a powerhouse component designed for high-power applications. With a collector emitter voltage of 600V and a DC collector current of 80A, this transistor is well-equipped to handle heavy power loads with ease. Its TO-247AB case style and 3 pins make it easy to integrate into various circuit designs, while the wide operating temperature range of -55°C to +150°C ensures dependable performance in diverse environmental conditions. Furthermore, the FGH40N60UFDTU transistor boasts a power dissipation rating of 290W, making it ideal for demanding industrial and automotive applications. What's more, this product is free of any SVHC substances, ensuring it is environmentally friendly and safe for use in electronic devices. When it comes to power management and control, the FGH40N60UFDTU IGBT transistor is the perfect choice for high-power, high-efficiency applications
主な特長
- Wide temperature range: -55°C to 150°C
- High isolation voltage: 5kV DC
- Rugged design for harsh environments
応用
- Electricity Transmission
- Renewable Energy
- Substation Equipment
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | TO-247-3 | Case Outline | 340CK |
| MSL Type | NA | MSL Temp (°C) | 0 |
| Container Type | TUBE | Container Qty. | 450 |
| ON Target | Y | V(BR)CES Typ (V) | 600 |
| IC Max (A) | 40 | VCE(sat) Typ (V) | 1.8 |
| VF Typ (V) | 1.95 | Eoff Typ (mJ) | 0.46 |
| Eon Typ (mJ) | 1.19 | Trr Typ (ns) | 45 |
| Gate Charge Typ (nC) | 120 | PD Max (W) | 290 |
| Co-Packaged Diode | Yes | Pricing ($/Unit) | $1.9964Sample |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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