FQT1N80TF-WS
N-Channel MOSFET with 800V, 0.2A, and 20Ohm specifications
在庫：6,672
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FQT1N80TF-WS
-
パッケージ/ケース : SOT223-4
-
Brand : Onsemi
-
Components Classification : Single FETs, MOSFETs
-
日付シート : FQT1N80TF-WS データシート (PDF)
概要 FQT1N80TF-WS
Featuring ON Semiconductor's proprietary technology, the FQT1N80TF-WS MOSFET is a top choice for demanding power management applications. Its optimized design delivers reduced resistance and exceptional switching performance, making it a valuable component for enhancing power efficiency in various systems. Whether used in power supplies, PFC circuits, or lighting applications, this MOSFET provides a dependable solution for achieving high performance and reliability
主な特長
- Fast response time (Typ. 20μs)
- High accuracy and stability
- Low noise and distortion
- Operating temperature range (-40°C to 125°C)
- Compact 8-pin SOIC package
応用
- Light up the night
- Bask in the glow
- Shine bright like a diamond
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | SOT-223-4 / TO-261-4 | Case Outline | 318H-01 |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 4000 |
| ON Target | Y | Channel Polarity | N-Channel |
| Configuration | Single | V(BR)DSS Min (V) | 800 |
| VGS Max (V) | ±30 | VGS(th) Max (V) | 5 |
| ID Max (A) | 0.2 | PD Max (W) | 2.1 |
| RDS(on) Max @ VGS = 10 V (mΩ) | 20000 | Qg Typ @ VGS = 10 V (nC) | 5.5 |
| Ciss Typ (pF) | 150 | Pricing ($/Unit) | $0.3451Sample |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
FQP19N20
FQP19N20 is a MOSFET featuring N-Channel QFET technology, suitable for applications requiring a 200V rating
FQP7N80C
N-Channel Power MOSFET from the QFET® series, capable of handling high voltage levels up to 800 V while offering a low on-resistance of 1.9 Ω
FQPF65N06
N-type channel silicon MOSFET
FQD20N06TM
Trans MOSFET N-CH 60V 16.8A 3-Pin(2+Tab) DPAK T/R
FQT3P20TF
Transistor MOSFET P-channel 200V 0.67A 4-SOT-223
BFQ67,215
Transistor Gp Bjt NPN 10V 0.05A 3-PIN TO-236AB T/r
FQA90N08
Trans MOSFET N-CH 80V 90A 3-Pin(3+Tab) TO-3P Tube
FQA65N20
Compliance: ROHS
FQA28N50F
3+Tab Configurations
FQA9P25
Trans MOSFET P-CH 250V 10.5A 3-Pin(3+Tab) TO-3P Tube
BLV21
BLV21: RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4
KSC3503DSTU
Pin with Three-Tab Configuration
PMZB290UNE
Voltage-controlled switch for electronic circuits
DMN63D8LV-7
Diodes Inc DMN63D8LV-7 Dual N-channel MOSFET Transistor, 0.26 A, 30 V, 6-Pin SOT-563
NVMFS5C460NLAFT1G
Non-Volatile Memory Field-Effect Transistor
MJE18008G
8A, 450V, 3-Pin TO-220AB Transistor
IXGM40N60A
IGBT Chip N-Type 600V 75A 250W Transistor TO-204AE 3-Pin (2+Tab)
IXXH100N60B3
600V N-Channel IGBT Chip capable of handling 220A current and 830W power
FZT653TA
Transistors with NPN Bipolar Junction for Medium Power
TIM1112-4
Versatile N-channel transistor for diverse RF application