FS100R17N3E4
Low-power economical IGBT modules (FS100R17N3E4)
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $432.479 | $432.48 |
200 | $167.364 | $33,472.80 |
500 | $161.482 | $80,741.00 |
1000 | $158.575 | $158,575.00 |
在庫:5,768
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FS100R17N3E4
-
パッケージ/ケース : RoHS
-
ブランド : INFINEON
-
コンポーネントのカテゴリ : IGBT Modules
-
日付シート : FS100R17N3E4 データシート (PDF)
概要 FS100R17N3E4
With the FS100R17N3E4, you can expect nothing but the best in terms of efficiency, speed, and reliability. Its cutting-edge technology and robust design make it a go-to option for those looking to elevate their projects to new heights. Say goodbye to overheating worries, thanks to the module's superior thermal performance and built-in temperature sensor. Trust in the FS100R17N3E4 to deliver exceptional results every time
応用
POWER CONTROL仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | FS100R17N3E4 | Pbfree Code | No |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
Case Connection | ISOLATED | Collector-Emitter Voltage-Max | 1700 V |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | Gate-Emitter Thr Voltage-Max | 6.4 V |
Gate-Emitter Voltage-Max | 20 V | JESD-30 Code | R-XUFM-X35 |
Number of Elements | 6 | Number of Terminals | 35 |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -40 °C |
Package Body Material | UNSPECIFIED | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 600 W |
Reference Standard | UL APPROVED | Surface Mount | NO |
Terminal Form | UNSPECIFIED | Terminal Position | UPPER |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 1240 ns |
Turn-on Time-Nom (ton) | 280 ns | VCEsat-Max | 2.3 V |
Manufacturer | Infineon | Product Category | IGBT Modules |
RoHS | Details | Product | IGBT Silicon Modules |
Collector- Emitter Voltage VCEO Max | 1.7 kV | Collector-Emitter Saturation Voltage | 1.95 V |
Continuous Collector Current at 25 C | 100 A | Gate-Emitter Leakage Current | 400 nA |
Pd - Power Dissipation | 600 W | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 150 C | Brand | Infineon Technologies |
Product Type | IGBT Modules | Series | Trenchstop IGBT4 - E4 |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Tradename | TRENCHSTOP EconoPACK | Part # Aliases | SP000880972 FS100R17N3E4BOSA1 |
Unit Weight | 10.582189 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IRFS3107TRLPBF](/img/package/d2pak3.jpg)
IRFS3107TRLPBF
Supplied in tape and reel packaging
![IRFS7730PBF](/img/package/to252.jpg)
IRFS7730PBF
Single N-Channel MOSFET for high voltage applications
![IRFS3006-7PPBF](/img/package/to263.jpg)
IRFS3006-7PPBF
High-current N-channel Silicon MOSFET, 60V, 293A, 7-Pin (6+Tab) D2PAK Tube
![FS6R06VE3_B2](/img/product.png)
FS6R06VE3_B2
High-power switching device for efficient power conversion and contr
![FS50R12KT4P_B11](/img/package/module.jpg)
FS50R12KT4P_B11
Cost-effective solution for small-scale industrial drive
![FS800R07A2E3](/img/package/hyb.jpg)
FS800R07A2E3
Insulated Gate Bipolar Transistor with 700A I(C), 650V V(BR)CES, and N-Channel design in Module-33
![FS400R12A2T4](/img/package/hyb.jpg)
FS400R12A2T4
IGBT Modules HYBRID PACK 2
![FS150R12PT4](/img/product.png)
FS150R12PT4
4. Product FS150R12PT4
![IRFS7537TRLPBF](/img/package/to263.jpg)
IRFS7537TRLPBF
D2PAK MOSFET with 60V N-channel and 173A current capability
![IRFS33N15DTRLP](/img/package/to-3.jpg)
IRFS33N15DTRLP
Low-RDS(on) solution for high-frequency power manageme