FZ600R12KP4
Cutting-edge power modules capable of handling 1200 volts and 600 amperes
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $311.359 | $311.36 |
200 | $120.493 | $24,098.60 |
500 | $116.258 | $58,129.00 |
1000 | $114.165 | $114,165.00 |
在庫:9,224
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FZ600R12KP4
-
パッケージ/ケース : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
日付シート : FZ600R12KP4 データシート (PDF)
概要 FZ600R12KP4
Infineon Technologies has once again proven its expertise in power electronics with the FZ600R12KP4 power module. This half-bridge configuration module consists of two IGBTs and two anti-parallel diodes, enabling bidirectional current flow and versatile application possibilities. The module's efficient design minimizes heat generation and maximizes power conversion efficiency, making it an ideal choice for industrial applications requiring high power density and reliability. With the FZ600R12KP4, engineers can trust in Infineon's commitment to innovation and quality in power electronics solutions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | C | Package | Tray |
Product Status | Active | IGBT Type | Trench Field Stop |
Configuration | Single | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 600 A | Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 600A |
Current - Collector Cutoff (Max) | 5 mA | Input Capacitance (Cies) @ Vce | 42 nF @ 25 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C | Mounting Type | Chassis Mount |
Package / Case | Module | Supplier Device Package | Module |
Base Product Number | FZ600R12 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IRFZ48ZPBF](/files/uploads/product/s/233fa607257f4bae889cba2afeebd840.webp)
IRFZ48ZPBF
61A 55V HEXFET 3-Pin TO-220AB Transistor by Infineon
![FZT600TA](/files/uploads/product/s/9650a13d4a7b4b0f81e1856fcff240c0.webp)
FZT600TA
40V maximum voltage rating in a 4-pin configuration with a tab for heat dissipation in a tape and reel packaging
![AUIRFZ24NS](/img/package/dpak2.jpg)
AUIRFZ24NS
Automotive N-channel silicon transistor with a voltage rating of 55V and current rating of 17A
![IRFZ44VPBF](/img/package/to220.jpg)
IRFZ44VPBF
16.5mΩ on-resistance at 10V and 55A
![IRFZ46NPBF](/img/package/to220.jpg)
IRFZ46NPBF
55V Hexfet Transistor
![IRFZ48NPBF](/img/package/to220.jpg)
IRFZ48NPBF
Transistor with N-MOSFET technology, capable of handling up to 55V and 64A, in a TO220AB package with a power rating of 94W
![FZ900R12KE4](/img/package/module.jpg)
FZ900R12KE4
1-Switch with 1200 Volts and 900 Amps, 62mm
![FZT560TA](/img/package/to3.jpg)
FZT560TA
Product FZT560TA is a PNP Bipolar Transistor with a rating of 500V and 2W at 80mA
![FZT696BTA](/img/package/to3.jpg)
FZT696BTA
180V NPN Transistor with 0.5A Current Rating and 70MHz Transition Frequency
![FZT458TA](/img/package/to3.jpg)
FZT458TA
High voltage NPN BJT bipolar transistors
![BUB323ZG](/img/package/d2pak3.jpg)
BUB323ZG
NPN Darlington Bipolar Power Transistor (BUB323ZG)
![IRLIZ34NPBF](/img/package/llp.jpg)
IRLIZ34NPBF
Ideal for various electronic applications requiring high power handling and switching capabilities
![IXTY1R6N50D2](/img/package/dpak.jpg)
IXTY1R6N50D2
N-channel MOSFETs with a voltage rating of 500V and a current rating of 1.6A
![RV2C014BCT2CL](/img/package/dfn10.jpg)
RV2C014BCT2CL
MOSFET P-Chnl with -20V Vdss and +/-1.4A Id RASMID
![PMV75UP,215](/img/package/sot23.jpg)
PMV75UP,215
Channel Mosfet Surface Mount Trench
![CMF10120D](/img/package/to247.jpg)
CMF10120D
This product is a high-voltage N-channel MOSFET made from Silicon Carbide, designed for a maximum voltage of 1
![SIA416DJ-T1-GE3](/img/package/sc70.jpg)
SIA416DJ-T1-GE3
N-Channel MOSFET, 100V
![AO4822A](/img/package/soic8.jpg)
AO4822A
8 package 2W power rating at 250uA current Dual 2 MOSFETs in a standard 8-pin configuration 2
![T835-800B](/img/package/dpak.jpg)
T835-800B
TRIAC 800V 8A(RMS) 84A 3-Pin(2+Tab) DPAK Tube
![2SC5200-O](/img/package/to-3.jpg)
2SC5200-O
Bipolar Transistors NPN 15A