G3R20MT12N
Silicon Carbide MOSFET N Channel Enhancement Mode
在庫：6,500
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : G3R20MT12N
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パッケージ/ケース : SOT-227-4
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Brand : GeneSiC Semiconductor
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Components Classification : Single FETs, MOSFETs
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日付シート : G3R20MT12N データシート (PDF)
概要 G3R20MT12N
Meet the G3R20MT12N Sic Mosfet from Genesic Semiconductor, offering superior performance in power electronics applications. This N-Channel Mosfet module is capable of handling high continuous drain currents of up to 105A and working with drain source voltages of 1.2Kv. With a power dissipation rating of 365W, this Mosfet is suitable for demanding tasks where reliability and efficiency are crucial. The 4-pin configuration simplifies installation, making it a versatile choice for various projects
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | G3R™ | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 60A, 15V | Vgs(th) (Max) @ Id | 2.69V @ 15mA |
| Gate Charge (Qg) (Max) @ Vgs | 219 nC @ 15 V | Vgs (Max) | +20V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5873 pF @ 800 V | Power Dissipation (Max) | 365W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 | Package / Case | SOT-227-4, miniBLOC |
| Base Product Number | G3R20 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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