GB75DA120UP
Insulated Gate Bipolar Transistor with N-Channel and ROHS Compliant Package-4
在庫:8,709
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : GB75DA120UP
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パッケージ/ケース : SOT-227-4
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Brand : VISHAY
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Components Classification : IGBT Modules
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日付シート : GB75DA120UP データシート (PDF)
概要 GB75DA120UP
FEATURES• NPT Generation V IGBT technology• Square RBSOA• HEXFRED® low Qrr, low switching energy• Positive VCE(on) temperature coefficient• Fully isolated package• Speed 8 kHz to 60 kHz• Very low internal inductance ( 5 nH typical)• Industry standard outline
主な特長
- NPT Generation V IGBT technology
- Square RBSOA
- HEXFRED® low Qrr, low switching energy
- Positive VCE(on) temperature coefficient
- Fully isolated package
- Speed 8 kHz to 60 kHz
- Very low internal inductance (≤ 5 nH typical)
- Industry standard outline
- UL approved file E78996
- Material categorization: For definitions of compliance
- please see www.vishay.com/doc?99912
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | Technology | Si |
Package / Case | SOT-227-4 | Mounting Style | SMD/SMT |
Configuration | Single Dual Emitter | Collector- Emitter Voltage VCEO Max | 1.2 kV |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 150 C | Brand | Vishay Semiconductors |
Continuous Collector Current Ic Max | 131 A | Height | 12.3 mm |
Length | 38.3 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Width | 25.7 mm | Part # Aliases | VS-GB90DA120U |
Unit Weight | 1.340411 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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