HGTP3N60A4
220AB 3-Pin Fairchild HGTP3N60A4 IGBT, 600V 17A
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $3.365 | $3.36 |
200 | $1.303 | $260.60 |
500 | $1.258 | $629.00 |
800 | $1.235 | $988.00 |
在庫:7,486
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : HGTP3N60A4
-
パッケージ/ケース : TO-220-3
-
Brand : Harris Corporation
-
Components Classification : Single IGBTs
-
日付シート : HGTP3N60A4 データシート (PDF)
-
Series : HGTP3N60A4
概要 HGTP3N60A4
The HGTP3N60A4 is a game-changer in the realm of high voltage switching, combining the best features of MOSFET and bipolar transistor technology. Its ability to minimize conduction losses while maintaining high input impedance makes it an excellent choice for applications requiring efficient performance at high frequencies. Whether it's in uninterruptible power supplies or welding machinery, this IGBT has been tailored to excel in fast switching applications, offering unmatched reliability and performance in demanding environments
主な特長
- High-speed switching power management
- Precision control for automation systems
- Reliable energy transmission and distribution
- Fast and efficient motor control solutions
- Advanced power electronics for industrial applications
- Safe and reliable high-voltage DC-DC conversion
応用
- Efficient heating tech
- Premium audio power
- Smart solar systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-220-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.05 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 17 A |
Pd - Power Dissipation | 70 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTP3N60A4 |
Brand | onsemi / Fairchild | Continuous Collector Current | 17 A |
Continuous Collector Current Ic Max | 17 A | Gate-Emitter Leakage Current | +/- 250 nA |
Height | 9.65 mm | Length | 10.67 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 800 |
Subcategory | IGBTs | Width | 4.83 mm |
Part # Aliases | HGTP3N60A4_NL | Unit Weight | 0.063493 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![HGTG20N50C1D](/img/package/to247.jpg)
HGTG20N50C1D
Chip for N-channel Insulated Gate Transistor (IGBT), Rated at 500 Volts and 26 Amperes, TO-247 Package
![HGTB12N60D1C](/img/package/to220.jpg)
HGTB12N60D1C
12A 600V current sensing N-channel IGBT
![HGTG20N50C1D](/img/package/to247.jpg)
HGTG20N50C1D
Chip for N-channel Insulated Gate Transistor (IGBT), Rated at 500 Volts and 26 Amperes, TO-247 Package
![HGTB12N60D1C](/img/package/to220.jpg)
HGTB12N60D1C
12A 600V current sensing N-channel IGBT
![2N4903](/img/package/to-3.jpg)
2N4903
5 A PNP Silicon Power Transistor
![AO4822A](/img/package/soic8.jpg)
AO4822A
8 package 2W power rating at 250uA current Dual 2 MOSFETs in a standard 8-pin configuration 2
![IPP051N15N5AKSA1](/img/package/to220.jpg)
IPP051N15N5AKSA1
N-channel MOSFET, capable of handling up to 150V and 120A, presented in a TO-220-3 package, designated as IPP051N15N5AKSA1 by INFINEON
![2SC4024](/img/package/to-220f.jpg)
2SC4024
Plastic/Epoxy 3-Pin NPN Power Bipolar Transistor, 10A I(C), 50V V(BR)CEO, Silicon
![IRF612](/img/package/to220.jpg)
IRF612
Power MOSFET IRF612 designed for efficient switching operations with a maximum current of 2.6A and a resistance of 2.4ohm
![IRF7901D1](/img/package/soic8.jpg)
IRF7901D1
N-channel 30V MOSFET with a current rating of 6.2A in an 8-pin SOIC package
![2SA1943OTU](/img/package/to264.jpg)
2SA1943OTU
Bipolar Junction Transistor (BJT) PNP 250V 17A
![BTA26-800CWRG](/img/package/to3.jpg)
BTA26-800CWRG
The BTA26-800CWRG is designed with a 25A current rating, 800V voltage capability, and comes in a TOP3 package
![FQA48N20](/img/package/to-3.jpg)
FQA48N20
Power transistor with N-Channel MOSFET technology, capable of handling 200V and 48A
![NJD35N04G](/img/package/dpak.jpg)
NJD35N04G
NPN Darlington Transistor with 350V, 2A rating