HUF75337P3
High-power N-channel MOSFET with 75A current rating, 0.014ohm resistance, and 55V voltage rating in TO-220AB package
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.256 | $0.26 |
| 200 | $0.099 | $19.80 |
| 400 | $0.096 | $38.40 |
| 800 | $0.094 | $75.20 |
在庫：9,995
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : HUF75337P3
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パッケージ/ケース : TO-220-3
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Brand : Harris Corporation
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Components Classification : Single FETs, MOSFETs
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日付シート : HUF75337P3 データシート (PDF)
概要 HUF75337P3
N-Channel 55 V 75A (Tc) 175W (Tc) Through Hole TO-220-3
主な特長
- 75A, 55V
- Simulation Models
- - Temperature Compensated PSPICE® and SABER™ Models
- - SPICE and SABER Thermal Impedance Models
- Available on the web at:
- www.fairchildsemi.com
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- - TB334, “Guidelines for Soldering Surface Mount
- Components to PC Boards”
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | UltraFET™ | Package | Tube |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) | Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 20 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1775 pF @ 25 V |
| Power Dissipation (Max) | 175W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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