IAUT165N08S5N029
ROHS H-PSOF-8-1 MOSFETs
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $17.321 | $17.32 |
| 200 | $6.704 | $1,340.80 |
| 500 | $6.469 | $3,234.50 |
| 1000 | $6.351 | $6,351.00 |
在庫：9,749
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IAUT165N08S5N029
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パッケージ/ケース : 8-PowerSFN
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : IAUT165N08S5N029 データシート (PDF)
概要 IAUT165N08S5N029
The IAUT165N08S5N029 power MOSFET from Infineon Technologies is a high-performance solution for industrial applications. With a VDS of 800V and ID of 17A, it offers reliable power handling for demanding power supply, telecom, and lighting systems. Its low RDS(on) of 165mΩ ensures high efficiency, while the high dv/dt immunity reduces electromagnetic interference, enhancing overall system reliability. The TO252-3 package provides excellent power density and thermal performance, making it suitable for applications requiring robust design and efficient power handling
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | OptiMOS™ | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V | Current - Continuous Drain (Id) @ 25°C | 165A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 2.9mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 108µA | Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 6370 pF @ 40 V |
| Power Dissipation (Max) | 167W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PG-HSOF-8-1 |
| Package / Case | 8-PowerSFN | Base Product Number | IAUT165 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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