IXTH20N50D
0 Amps 500V depletion mode N-channel MOSFET with 0.33 Rds
在庫：7,509
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部品番号 : IXTH20N50D
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH20N50D データシート (PDF)
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Series : IXTH20N50
概要 IXTH20N50D
Featuring a single element design, the IXTH20N50D operates efficiently in various electronic circuits, delivering reliable performance and long-term durability. Designed as an N-Channel Metal-oxide Semiconductor FET, this transistor offers a high level of efficiency in power conversion applications. The TO-247AA package ensures efficient heat dissipation, allowing the transistor to operate at optimal temperatures for extended periods
主な特長
- Normally ON Mode
- International standard packages
- Molding epoxies meet UL94 V-0 flammability classification
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-247-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 500 V |
| Id - Continuous Drain Current | 20 A | Rds On - Drain-Source Resistance | 330 mOhms |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 400 W |
| Channel Mode | Depletion | Series | IXTH20N50 |
| Brand | IXYS | Configuration | Single |
| Fall Time | 75 ns | Height | 21.46 mm |
| Length | 16.26 mm | Product Type | MOSFET |
| Rise Time | 85 ns | Factory Pack Quantity | 30 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 110 ns | Typical Turn-On Delay Time | 35 ns |
| Width | 5.3 mm | Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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