IHW30N160R2FKSA1
RC-IGBT technology
在庫：5,829
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IHW30N160R2FKSA1
-
パッケージ/ケース : TO-247-3
-
Brand : INFINEON
-
Components Classification : Single IGBTs
-
日付シート : IHW30N160R2FKSA1 データシート (PDF)
-
Series : 600V TRENCHSTOP
概要 IHW30N160R2FKSA1
The IHW30N160R2FKSA1 is a cutting-edge power module that offers unmatched performance and reliability for demanding industrial applications. With its high current and voltage ratings, this IGBT module is the perfect choice for motor drives, welding equipment, and renewable energy systems. Thanks to its advanced technology, it delivers exceptional switching speeds and minimal losses, leading to enhanced efficiency and durability. Additionally, its compact design ensures easy installation and efficient thermal management, making it a preferred solution for challenging environments
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | Infineon | Product Category | IGBT Transistors |
| RoHS | Details | Technology | Si |
| Package / Case | TO-247-3 | Mounting Style | Through Hole |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 1.6 kV |
| Collector-Emitter Saturation Voltage | 1.8 V | Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Continuous Collector Current at 25 C | 60 A | Pd - Power Dissipation | 312 W |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 175 C |
| Series | 600V TRENCHSTOP | Brand | Infineon Technologies |
| Gate-Emitter Leakage Current | 100 nA | Product Type | IGBT Transistors |
| Factory Pack Quantity | 240 | Subcategory | IGBTs |
| Tradename | TRENCHSTOP | Part # Aliases | IHW30N160R2 SP000273701 IHW3N16R2XK |
| Unit Weight | 0.191185 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IHCS22R60CE
Phase Switched Reluctance for Power Applications
IHW20N120R
A 1200V N-CHANNEL IGBT known as IHW20N120R, packaged in TO-247AC, with a current rating of 30A
IHW30N135R5
IGBT Transistor 1350V 30A To247
IHW25N120E1
N-channel Insulated Gate Bipolar Transistor (IGBT) Chip with a Voltage Rating of 1200V and Current Handling Capacity of 50A
IHW40N135R3
IGBT Transistors for IGBT PRODUCTS TrenchStop RC
IHW15N120R3
ROHS TO-247-3 IGBTs
MPSA06G
TO-92 (TO-226) packaged MPSA06G transistor features NPN Bipolar technology for small signal amplification
IRF644PBF
IRF644PBF is an N-Channel MOSFET capable of handling 250 volts and 14 amps, packaged in TO220AB
BC81740MTF
SOT-23 NPN Bipolar Transistors for General Purpose Amplification
VS-100MT060WDF
Trans IGBT Module N-CH 600V 121A 462W 14-Pin MTP
FQB27P06TM
Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm
IXFB300N10P
100V Polar Power MOSFET with 300A Rating
ZVN4106F
Described as a MOSFET discrete semiconductor
SI2319DS-T1-GE3
This product is a MOSFET rated for 40 volts and capable of handling currents up to 3
NTE5645
600V 100A TRIAC with Isolated 3-Pin TO-220
AT-42070
AT-42070 RF Bipolar Transistors Transistor Si