|
IXFX120N20
|
200V, 120A MOSFET |
Littelfuse |
7,831 |
|
|
IXFH88N30P
|
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current |
Littelfuse |
6,158 |
|
|
IXFH44N50P
|
44A, 500V N-channel transistor with TO-247AD packaging |
Littelfuse |
6,837 |
|
|
IXFX48N50Q
|
Transistor MOSFET, N-Type, Capable of Handling 500 Volts and 48 Amps, Encased in TO-247 Package |
Littelfuse |
9,645 |
|
|
FGH40N60UFD
|
High-power transistor for industrial applicatio |
Onsemi |
4,423 |
|
|
STW18NK80Z
|
Product Description: Transistor MOSFET N-Channel 800 Volts 19 Amps 3-Pin TO-247 Tube |
Stmicroelectronics |
6,139 |
|
|
IHW30N160R2
|
600V, 60A current |
Infineon |
9,692 |
|
|
HGTG20N60A4
|
Insulated Gate Bipolar Transistor, 600V, SMPS |
Onsemi |
7,501 |
|
|
HGTG12N60A4D
|
Low power dissipation |
Onsemi |
5,035 |
|
|
FGH80N60FDTU
|
Product FGH80N60FDTU: N-channel 600V 80A Trans IGBT Chip, TO-247 Package, 290W Power Dissipation |
Onsemi |
5,536 |
|
|
FDH5500
|
Description of product FDH5500: 55 volts, 75 amperes, with a 7 milliohm resistance at 75 amperes |
Onsemi |
7,901 |
|
|
IXKR25N80C
|
Three-pin N-channel MOSFET with 800V and 25A rating |
IXYS |
4,268 |
|
|
SIHG47N60E-GE3
|
Unipolar N-MOSFET transistor with a voltage rating of 600V and a current rating of 30A |
Vishay |
7,937 |
|
|
IRFP460LCPBF
|
The IRFP460LCPBF is a TO-247AC-3 package MOSFET that complies with RoHS regulations |
Vishay |
3,802 |
|
|
IRFP264PBF
|
Siliconix through-hole MOSFET |
Vishay |
8,273 |
|
|
MJW21196
|
Compact TO-package ensures reliable performance and easy installatio |
Onsemi |
9,795 |
|
|
STW20NM60FD
|
TO247 Transistor 214W |
ST |
8,567 |
|
|
RFG60P06E
|
Suitable for power applications |
onsemi |
7,168 |
|
|
IDW20G65C5
|
Product IDW20G65C5 is a ROHS compliant 20A Schottky Barrier Diode with a voltage rating of 650V and a forward voltage drop of 1.5V at 10A |
INFINEON |
7,274 |
|
|
TIP3055
|
Trans GP BJT NPN 60V 15A 90000mW 3-Pin(3+Tab) TO-247 Tube |
ST |
4,808 |
|
|
SPW35N60C3
|
Infineon SPW35N60C3 N-channel MOSFET Transistor, 34.6 A, 650 V, 3-Pin TO-247 |
Infineon Technologies |
6,772 |
|
|
IPW65R110CFD
|
Infineon IPW65R110CFD N-channel MOSFET Transistor, 31.2 A, 700 V, 3-Pin TO-247 |
INFINEON |
6,563 |
|
|
IRFP460PBF
|
N-channel MOSFET,IRFP460 20A 500V |
Vishay |
7,082 |
|
|
IRFP054NPBF
|
MOSFET N-Channel 55V 81A TO247AC International Rectifier IRFP054NPBF N-channel MOSFET Transistor, 81 A, 55 V, 3-Pin TO-247AC |
Infineon Technologies |
8,096 |
|
|
DSSK60-02A
|
A Schottky rectifying diode suitable for Through-Hole Technology (THT) mounting |
Ixys |
7,830 |
|
|
IXFR24N50Q
|
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23 |
Ixys Corporation |
9,864 |
|
|
RGTH60TS65DGC11
|
50V 30A power transistors |
Rohm Semiconductor |
6,270 |
|
|
IXFH220N20X3
|
200V 220A 960W MOSFET |
IXYS |
9,923 |
|
|
GAN063-650WSAQ
|
High voltage MOSFET suitable for various power applications |
Nexperia USA Inc. |
9,469 |
|
|
IXTH220N20X4
|
Discrete MOSFET with 220A and 200V |
IXYS |
9,333 |
|
|
IXFH150N30X3
|
The product description for IXFH150N30X3 includes an N-channel MOSFET with ultra junction in a quantity of 3 |
IXYS |
6,607 |
|
|
IXFH100N30X3
|
An N-MOSFET transistor of X3-Class |
IXYS |
6,756 |
|
|
MSC035SMA070B
|
It has a threshold voltage of 2.7V at 2mA and comes in a TO-247-3 package |
Microchip Technology |
9,557 |
|
|
MSC050SDA120B
|
Diode Schottky SiC 1.2KV 109A 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
5,864 |
|
|
MSC035SMA170B
|
1700V Silicon Carbide (SiC) MOSFET |
Microchip Technology |
8,973 |
|
|
MSC025SMA120B
|
MSC025SMA120B MOSFET: Harness the power of Silicon Carbide (SiC) with this 1200-volt device |
Microchip Technology |
5,084 |
|
|
MSC080SMA120B
|
SiC N-Channel MOSFET 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube |
Microchip Technology |
6,289 |
|
|
MSC015SMA070B
|
MSC015SMA070B, also known as Silicon Carbide MOSFETs, are cutting-edge semiconductor devices designed for high-performance applications |
Microchip Technology |
8,346 |
|
|
IXFH22N65X2
|
High current 650V N-channel power MOSFET |
IXYS |
7,409 |
|
|
IXTH34N65X2
|
IXTH34N65X2 - Power Field-Effect Transistor |
IXYS |
7,311 |
|
|
IXTH48N65X2
|
IXTH48N65X2: Power Field-Effect Transistor product details |
IXYS |
7,032 |
|
|
LSIC1MO170E1000
|
Field-Effect Transistor for High Power |
Littelfuse |
7,938 |
|
|
IXFH60N65X2
|
MOSFET IXFH60N65X2, featuring Ultra Junction X2 technology, offers 650V voltage capacity and 60A current handling capability |
IXYS |
6,538 |
|
|
IXFH12N90
|
High-Voltage MOSFET, 12 Amperes, Low Resistance |
Littelfuse |
6,261 |
|
|
TIP141G
|
Trans Darlington NPN 80V 10A 125000mW 3-Pin(3+Tab) TO-247 Tube |
onsemi |
8,320 |
|
|
STW21NM50N
|
Tube packaging for STW21NM50N MOSFET transistor |
Stmicroelectronics |
9,346 |
|
|
STW13NK80Z
|
channel power MOSFET |
Stmicroelectronics |
8,369 |
|
|
STW15NB50
|
TO-247AA N-Channel MOSFET Transistor |
Stmicroelectronics |
9,217 |
|
|
STW60NM50N
|
High-performance N-channel MOSFET employing MDmesh II FET technology, engineered for applications requiring a 500V voltage rating, 0 |
Stmicroelectronics |
7,497 |
|
|
STW9NB80
|
MOSFET with N-Channel configuration, 9 Amp current capacity, and 800 Volt rating |
Stmicroelectronics |
7,701 |
|
