IKP20N60H3
IGBT Transistors for High-Speed Switching Applications with 600V Voltage Rating
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.681 | $1.68 |
| 10 | $1.455 | $14.55 |
| 50 | $1.313 | $65.65 |
| 100 | $1.169 | $116.90 |
| 500 | $1.104 | $552.00 |
| 1000 | $1.075 | $1,075.00 |
在庫：6,733
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IKP20N60H3
-
パッケージ/ケース : TO-220-3
-
Brand : Infineon Technologies
-
Components Classification : Single IGBTs
-
日付シート : IKP20N60H3 データシート (PDF)
-
Series : TRENCHSTOP HIGH SPEED 3
概要 IKP20N60H3
IGBT Trench Field Stop 600 V 40 A 170 W Through Hole PG-TO220-3
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | TrenchStop® | Package | Tube |
| Product Status | Active | IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 80 A | Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 20A |
| Power - Max | 170 W | Switching Energy | 690µJ |
| Input Type | Standard | Gate Charge | 120 nC |
| Td (on/off) @ 25°C | 16ns/194ns | Test Condition | 400V, 20A, 14.6Ohm, 15V |
| Reverse Recovery Time (trr) | 112 ns | Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-220-3 |
| Supplier Device Package | PG-TO220-3 | Base Product Number | IKP20N60 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IKP20N60TXKSA1
Overview of IKP20N60TXKSA1: A member of the IKP20N60T Series, featuring 600V 41A Through Hole IGBT TrenchStop technology in a PG-TO-220-3 housing
IKW40N120H3FKSA1
High Power Transistors
IKW75N60H3
600V IGBT capable of handling currents up to 75A, featuring a low forward voltage of 2.0V, presented in TO247-3 package
IKQ75N120CH3XKSA1
IGBT Transistor with 1.2kV Voltage Rating, 75A Current, and 256W Power Dissipation in TO247-3 Package
IKQ120N60TXKSA1
Trans IGBT Chip N-Channel 600V 160A 833W TO-247
IKW50N65F5FKSA1
CH 650V 80A 305W 3-Pin ~24J5000W30420AJHGIBT
IKW20N60T
Insulated Gate Bipolar Transistor with 650V voltage rating, 20A current rating, and 1.5V threshold voltage in TO247-3 package
IKW50N65ET7
High-performance power semiconductor device
IKW50N65F5
Trans IGBT Chip
IKW40N65F5
Description: N-channel Insulated Gate Bipolar Transistor (IGBT) chip
SI7439DP-T1-E3
The SI7439DP-T1-E3, from the Si7439DP Series, is a P-channel MOSFET engineered for surface-mount applications
ZXMN3A01F
channel silicon metal-oxide semiconductor
2SC5006-T1-A
Silicon NPN RF Bipolar Transistors for Amplification
SI7619DN-T1-GE3
Vishay SI7619DN-T1-GE3 P-channel MOSFET Transistor, 23.8 A, -30 V, 8-Pin PowerPAK 1212
AON7400B
0V 40A Power Transistor
APT12031JFLL
APT12031JFLL is a POWER FREDFET TRANSISTOR
MRF6V3090NBR1
90W Power Handling Capabilities
MAC15A8G
Littelfuse's MAC15A8G is a 3-Pin TO-220AB TRIAC capable of controlling up to 600V and 15A, with a gate trigger specification of 2
2SC4081UBTLR
2SC4081UBTLR Bipolar Transistor by Rohm
ACS102-5T1
500V TRIAC diode capable of handling currents up to 0.2A RMS, enclosed in an 8-pin SO N Tube casing