IKW50N65F5FKSA1
CH 650V 80A 305W 3-Pin ~24J5000W30420AJHGIBT
在庫:7,285
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部品番号 : IKW50N65F5FKSA1
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パッケージ/ケース : TO-247-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IKW50N65F5FKSA1 データシート (PDF)
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Series : IKW50N65F5
概要 IKW50N65F5FKSA1
Engineered for high switching frequency applications, the IKW50N65F5FKSA1 power semiconductor device by Infineon Technologies is a standout performer. Its low on-state resistance of 0.1 ohms and high switching speed make it a top choice for power supplies, LED lighting, and other power electronics systems. Additionally, the compact TO-247 package not only enhances thermal performance but also ensures reliability in demanding operational environments. With a drain current of up to 50A and a gate threshold voltage of 4V, this power MOSFET offers precise control and is suitable for medium to high power applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | TrenchStop® | Package | Tube |
Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 80 A | Current - Collector Pulsed (Icm) | 150 A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A | Power - Max | 305 W |
Switching Energy | 490µJ (on), 160µJ (off) | Input Type | Standard |
Gate Charge | 120 nC | Td (on/off) @ 25°C | 21ns/175ns |
Test Condition | 400V, 25A, 12Ohm, 15V | Reverse Recovery Time (trr) | 52 ns |
Operating Temperature | -40°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Package / Case | TO-247-3 | Supplier Device Package | PG-TO247-3 |
Base Product Number | IKW50N65 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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