IPB020N10N5ATMA1
This MOSFET is an N-channel type suitable for high-power applications
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部品番号 : IPB020N10N5ATMA1
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パッケージ/ケース : D2PAK-3
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : IPB020N10N5ATMA1 データシート (PDF)
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Series : IPB020N10N5
概要 IPB020N10N5ATMA1
The IPB020N10N5ATMA1 is a high-power field-effect transistor designed for applications requiring high current handling capability. With a maximum current rating of 120A and a voltage rating of 100V, this N-channel silicon MOSFET is well-suited for power electronics applications where efficiency and reliability are key
主な特長
- N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Extremely low on-resistance R DS(on) High current capability 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| functionalPacking | TAPE & REEL | addProductInfo | RoHS compliant, non dry |
| packageNameMarketing | D2PAK | msl | 1 |
| halogenFree | yes | customerInfo | STANDARD |
| fgr | V73 | productClassification | ASP |
| productStatusInfo | active and preferred | hfgr | A |
| packageName | PG-TO263-3 | pbFree | yes |
| moistureProtPack | NON DRY | orderingCode | SP001132558 |
| fourBlockPackageName | PG-TO263-3-2 | rohsCompliant | yes |
| opn | IPB020N10N5ATMA1 | completelyPbFree | no |
| sapMatnrSali | SP001132558 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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