IPD25N06S4L-30
Transistor MOSFET N-Channel 60V 25A for Automotive Use
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.049 | $1.05 |
| 10 | $0.900 | $9.00 |
| 30 | $0.818 | $24.54 |
| 100 | $0.725 | $72.50 |
| 500 | $0.685 | $342.50 |
| 1000 | $0.667 | $667.00 |
在庫：6,420
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IPD25N06S4L-30
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パッケージ/ケース : DPAK (PG-TO252-3)
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Brand : Infineon
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Components Classification : Single FETs, MOSFETs
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日付シート : IPD25N06S4L-30 データシート (PDF)
概要 IPD25N06S4L-30
Utilizing TrenchFET Gen IV technology, the IPD25N06S4L-30 offers improved performance in terms of efficiency, reliability, and thermal management. The MOSFET's low gate charge allows for fast switching and reduced power losses, further enhancing its efficiency
主な特長
- Rapid switching capabilities
- Low power consumption
- Efficient heat dissipation
応用
- Integrated power solutions
- Efficient solar inverters
- Heavy-duty power equipment
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| IDpuls max | 92.0 A | RthJC max | 5.1 K/W |
| Ptot max | 29.0 W | Qualification | Automotive |
| Package | DPAK (PG-TO252-3) | VDS max | 60.0 V |
| RDS (on) max | 30.0 mΩ | VGS(th) max | 2.0 V |
| QG max | 12.5 nC | Polarity | N |
| ID max | 25.0 A | Technology | OptiMOS™-T2 |
| VGS(th) min | 1.2 V | Operating Temperature max | 175.0 °C |
| Operating Temperature min | -55.0 °C |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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