IPB027N10N5ATMA1
High-current N-channel MOSFET with 120A maximum drain current, 100V voltage rating, and 0.0027ohm on-resistance
在庫:6,031
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IPB027N10N5ATMA1
-
パッケージ/ケース : D2PAK-3
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IPB027N10N5ATMA1 データシート (PDF)
-
Series : IPB027N10N5
概要 IPB027N10N5ATMA1
Explore the diverse landscape of applications ripe for the IPB027N10N5ATMA1 integration. From telecom infrastructures to server environments, these MOSFETs excel in powering critical equipment with utmost efficiency. Their adaptability extends to solar installations, low voltage drives, and adapters, catering to the evolving needs of modern industries. Furthermore, the emergence of light electric vehicles finds a reliable ally in these MOSFETs, promising enhanced performance and longevity in this burgeoning sector
主な特長
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Extremely low on-resistance R DS(on)
- High current capability
- 175 °C operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
functionalPacking | TAPE & REEL | addProductInfo | RoHS compliant, non dry |
packageNameMarketing | D2PAK | msl | 1 |
halogenFree | yes | customerInfo | STANDARD |
fgr | W20 | productClassification | ASP |
productStatusInfo | active and preferred | hfgr | A |
packageName | PG-TO263-3 | pbFree | yes |
moistureProtPack | NON DRY | orderingCode | SP001227034 |
fourBlockPackageName | PG-TO263-3-2 | rohsCompliant | yes |
opn | IPB027N10N5ATMA1 | completelyPbFree | no |
sapMatnrSali | SP001227034 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IPB072N15N3GATMA1](/img/package/to263.jpg)
IPB072N15N3GATMA1
Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R
![IPC50N04S5L5R5ATMA1](/img/package/son8.jpg)
IPC50N04S5L5R5ATMA1
OptiMOS™ 5 QFN 5X6 40V
![IPC50N04S55R8ATMA1](/img/package/son8.jpg)
IPC50N04S55R8ATMA1
Automotive-grade N-Channel MOSFET with 40V Voltage Rating and 50A Current Capacity
![IPB65R110CFDA](/img/package/to263.jpg)
IPB65R110CFDA
Maximum power dissipation of 277.8W at 4.5V and 12.7A
![IPB65R660CFDA](/img/package/to263.jpg)
IPB65R660CFDA
Integrate the IPB65R660CFDA seamlessly into your circuitry for optimized performance
![IPD30N10S3L34ATMA1](/img/package/to-3.jpg)
IPD30N10S3L34ATMA1
Automotive grade
![IPD35N10S3L26ATMA1](/img/package/to-3.jpg)
IPD35N10S3L26ATMA1
Automotive-grade N-channel MOSFET featuring a 100V voltage rating, 35A current capacity, and DPAK package with 3 pins
![IPD90P04P405ATMA1](/img/package/to252.jpg)
IPD90P04P405ATMA1
OptiMOS-P2 DPAK-2 MOSFET capable of handling -90A current at -40V voltage
![IPD90P04P4L04ATMA1](/img/package/dpak.jpg)
IPD90P04P4L04ATMA1
Description: P-Ch MOSFET with a rating of -40V and a current capacity of -90A, packaged in DPAK-2 OptiMOS-P2
![IPP60R080P7XKSA1](/img/package/to220.jpg)
IPP60R080P7XKSA1
Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube
![IXFH15N80](/img/package/to247.jpg)
IXFH15N80
effect transistor 15a id 800v 0.6ohm 1-element n-channel silicon metal-oxide semiconductor fet to-247ad to-247ad 3 pin
![NTHS4101PT1G](/img/package/smd.jpg)
NTHS4101PT1G
NTHS4101PT1G is a P-channel MOSFET capable of handling currents up to -6.7A at a voltage of -20V
![MTP10N40E](/img/package/to220.jpg)
MTP10N40E
N-CHANNEL POWER MOSFET
![NVMFD5C650NLT1G](/img/package/so8.jpg)
NVMFD5C650NLT1G
Capable of handling up to 125 watts with a voltage drop of 2.2 volts at 98 microamperes
![SUB75P05-08](/img/package/to263.jpg)
SUB75P05-08
3-pin, 2+Tab package design for easy installation
![SI7450DP-T1-GE3](/img/package/power33.jpg)
SI7450DP-T1-GE3
Single N-Channel Power MOSFET with 200 V rating, 0.08 ohm resistance, and 42 nC charge
![MMBTA56WT1G](/img/package/sc70.jpg)
MMBTA56WT1G
3-Pin SC-70 PNP BJT Transistor 80V 0.5A T/R
![2SJ598-AZ](/img/package/to3.jpg)
2SJ598-AZ
Pch Single Power Mosfet -60V
![MMBFU310LT1](/img/package/sc74.jpg)
MMBFU310LT1
This N-Channel JFET device is ideal for high frequency amplifiers and oscillators
![IRG4PH30KD](/img/package/to247.jpg)
IRG4PH30KD
Insulated Gate Bipolar Transistor, IRG4PH30KD