IPD35N10S3L26ATMA1
Automotive-grade N-channel MOSFET featuring a 100V voltage rating, 35A current capacity, and DPAK package with 3 pins
在庫:6,416
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部品番号 : IPD35N10S3L26ATMA1
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パッケージ/ケース : TO-252-3
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ブランド : INFINEON
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IPD35N10S3L26ATMA1 データシート (PDF)
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Series : IPD35N10S3L-26
概要 IPD35N10S3L26ATMA1
Designed for the future of electrical engineering, the IPD35N10S3L26ATMA1 MOSFET transistor stands out as a pinnacle of technological innovation in the realm of power electronics. Its cutting-edge features, including a low on-state resistance and fast-switching capabilities, position it as a game-changer in the field, enabling designers to push the boundaries of efficiency and performance in their projects. With a focus on quality and compliance with global standards, this product embodies a commitment to excellence that resonates across industries worldwide
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TO-252-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 35 A |
Rds On - Drain-Source Resistance | 20 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 39 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 71 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Series | XPD35N10 |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 3 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 4 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 18 ns | Typical Turn-On Delay Time | 6 ns |
Width | 6.22 mm | Part # Aliases | IPD35N10S3L-26 SP000386184 |
Unit Weight | 0.011640 oz | Product Status | Active |
FET Type | N-Channel | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 35A, 10V | Vgs(th) (Max) @ Id | 2.4V @ 39µA |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V | Power Dissipation (Max) | 71W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3-11 | Base Product Number | IPD35N10 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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