IPDD60R170CFD7XTMA1
Robust and Reliable MOSFET Solution for Modern Systems
在庫:7,834
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IPDD60R170CFD7XTMA1
-
パッケージ/ケース : HDSOP-10-1
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IPDD60R170CFD7XTMA1 データシート (PDF)
-
Series : IPDD60R170CFD7
概要 IPDD60R170CFD7XTMA1
N-Channel 600 V 19A (Tc) 137W (Tc) Surface Mount PG-HDSOP-10-1
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | HDSOP-10-1 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 19 A |
Rds On - Drain-Source Resistance | 170 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 4.5 V | Qg - Gate Charge | 23 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 137 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Product Type | MOSFET |
Factory Pack Quantity | 1700 | Subcategory | MOSFETs |
Part # Aliases | IPDD60R170CFD7 SP005060550 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IPB072N15N3GATMA1](/img/package/to263.jpg)
IPB072N15N3GATMA1
Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R
![IPC50N04S5L5R5ATMA1](/img/package/son8.jpg)
IPC50N04S5L5R5ATMA1
OptiMOS™ 5 QFN 5X6 40V
![IPC50N04S55R8ATMA1](/img/package/son8.jpg)
IPC50N04S55R8ATMA1
Automotive-grade N-Channel MOSFET with 40V Voltage Rating and 50A Current Capacity
![IPB65R110CFDA](/img/package/to263.jpg)
IPB65R110CFDA
Maximum power dissipation of 277.8W at 4.5V and 12.7A
![IPB65R660CFDA](/img/package/to263.jpg)
IPB65R660CFDA
Integrate the IPB65R660CFDA seamlessly into your circuitry for optimized performance
![IPD30N10S3L34ATMA1](/img/package/to-3.jpg)
IPD30N10S3L34ATMA1
Automotive grade
![IPD35N10S3L26ATMA1](/img/package/to-3.jpg)
IPD35N10S3L26ATMA1
Automotive-grade N-channel MOSFET featuring a 100V voltage rating, 35A current capacity, and DPAK package with 3 pins
![IPD90P04P405ATMA1](/img/package/to252.jpg)
IPD90P04P405ATMA1
OptiMOS-P2 DPAK-2 MOSFET capable of handling -90A current at -40V voltage
![IPD90P04P4L04ATMA1](/img/package/dpak.jpg)
IPD90P04P4L04ATMA1
Description: P-Ch MOSFET with a rating of -40V and a current capacity of -90A, packaged in DPAK-2 OptiMOS-P2
![IPP60R080P7XKSA1](/img/package/to220.jpg)
IPP60R080P7XKSA1
Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube
![IHCS22R60CE](/img/package/sip7.jpg)
IHCS22R60CE
Phase Switched Reluctance for Power Applications
![IRF9Z24PBF](/img/package/to220.jpg)
IRF9Z24PBF
MOSFET P-CH -60V HEXFET MOSFET
![FF800R12KE3](/img/package/module.jpg)
FF800R12KE3
IGBT module designed for high-power applications with a dual configuration, rated at 1200 volts and 800 amps
![SI4497DY-T1-GE3](/img/package/soic8.jpg)
SI4497DY-T1-GE3
P-channel SOIC-8 MOSFET with a voltage rating of 30V and a maximum current of 36A, featuring a low on-resistance of 3.3mΩ at 10V and 20A
![SI2315BDS-T1](/img/package/sot233.jpg)
SI2315BDS-T1
81-SI2333CDS-T1-GE3, recommended alternative, MOSFET, SI2315BDS-T1
![NP100P04PDG-E1-AY](/img/package/d2pak3.jpg)
NP100P04PDG-E1-AY
If you need a P-channel MOSFET for high current switching applications, look no further than the NP100P04PDG
![DMMT3904W-7-F](/img/package/sot236.jpg)
DMMT3904W-7-F
Diodes Inc DMMT3904W-7-F Dual NPN Bipolar Transistor, 200 mA, 40 V, 6-Pin SOT-363
![MMBTH10-4LT1G](/img/package/sot23.jpg)
MMBTH10-4LT1G
Trans GP BJT NPN SOT-23 25V 3-Pin T/R
![2N6517BU](/img/package/to92.jpg)
2N6517BU
TO-92 Packaged NPN Transistor for General Purpose Applications, Rated at 350V and 500mA - Bulk
![IRFPC60LCPBF](/img/package/to247.jpg)
IRFPC60LCPBF
IRFPC60LCPBF - Infineon N-Channel Power MOSFET