IPN60R3K4CE
SOT223-packaged N-channel MOSFET rated for 600V with a 2.6A current capacity and 3400mOhm on-resistance
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.475 | $0.48 |
10 | $0.386 | $3.86 |
30 | $0.342 | $10.26 |
100 | $0.298 | $29.80 |
500 | $0.272 | $136.00 |
1000 | $0.258 | $258.00 |
在庫:8,387
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IPN60R3K4CE
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パッケージ/ケース : SOT-223
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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日付シート : IPN60R3K4CE データシート (PDF)
概要 IPN60R3K4CE
The IPN60R3K4CE power MOSFET by Infineon Technologies is a top-of-the-line component designed to meet the demands of modern power electronics systems. Featuring an N-channel configuration and a drain-source breakdown voltage of 60V, this MOSFET offers exceptional performance and reliability. Its low on-state resistance of 3.4mOhm enables efficient power switching and reduced energy consumption in high-current applications. With a high continuous drain current rating of 140A, the IPN60R3K4CE is well-suited for a variety of power management tasks, including motor control, DC-DC converters, and synchronous rectification. Housed in a TO-220 package, this transistor is easy to install and provides excellent thermal dissipation for optimized functionality. Its ability to operate at high switching frequencies ensures precise power control, making it an indispensable component for demanding applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
IDpuls max | 3.9 A | Mounting | SMT |
Ptot max | 5.0 W | Polarity | N |
RthJA max | 75.0 K/W | VDS max | 600.0 V |
ID max | 2.6 A | RDS (on) max | 3400.0 mΩ |
Special Features | price/performance | Package | SOT-223 |
VGS(th) max | 3.5 V | VGS(th) min | 2.5 V |
Operating Temperature max | 150.0 °C | Operating Temperature min | -40.0 °C |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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