IRF1312S
80V N-channel D2PAK MOSFET with 95A current rating
在庫:8,224
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部品番号 : IRF1312S
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パッケージ/ケース : D2PAK-3
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ブランド : Infineon Technologies
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コンポーネントのカテゴリ : Single Bipolar Transistors
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日付シート : IRF1312S データシート (PDF)
概要 IRF1312S
In summary, the IRF1312S MOSFET offers a winning combination of high current capacity, low on-resistance, and reliable performance in a compact package. With its impressive power dissipation rating and voltage handling capabilities, this MOSFET is sure to meet the demands of even the most challenging applications. Trust the IRF1312S MOSFET to deliver superior performance and reliability in your next design project
主な特長
- Advanced radiation hardness
- Low-power consumption
- Fast-recovery performance
応用
- Class D audio amplifier
- Welding machine power
- UPS power systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
ECCN (US) | EAR99 | Part Status | Obsolete |
Automotive | No | PPAP | No |
Category | Power MOSFET | Configuration | Single |
Process Technology | HEXFET | Channel Mode | Enhancement |
Channel Type | N | Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 80 | Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 95 | Maximum Drain Source Resistance (MOhm) | 10@10V |
Typical Gate Charge @ Vgs (nC) | 93@10V | Typical Gate Charge @ 10V (nC) | 93 |
Typical Input Capacitance @ Vds (pF) | 5450@25V | Maximum Power Dissipation (mW) | 3800 |
Typical Fall Time (ns) | 51 | Typical Rise Time (ns) | 130 |
Typical Turn-Off Delay Time (ns) | 47 | Typical Turn-On Delay Time (ns) | 25 |
Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 175 |
Mounting | Surface Mount | Package Height | 4.83(Max) |
Package Width | 9.65(Max) | Package Length | 10.67(Max) |
PCB changed | 2 | Tab | Tab |
Standard Package Name | TO-263 | Supplier Package | D2PAK |
Pin Count | 3 | Lead Shape | Gull-wing |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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