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IRF3711PBF

Trans MOSFET N-CH 20V 110A 3-Pin(3+Tab) TO-220AB Tube

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概要 IRF3711PBF

The IRF3711PBF is a Power MOSFET designed for high-power applications. It is a N-channel MOSFET with a drain-source voltage rating of 20V and a continuous drain current of 57A. The MOSFET has a low on-resistance of 14.5mΩ, making it suitable for applications where low power loss and high efficiency are important.The IRF3711PBF has a gate threshold voltage of 2V and a gate-source voltage rating of ±20V. It features a fast switching speed and a high pulse current capability, making it suitable for applications that require high-speed switching.The MOSFET is housed in a TO-220AB package, which provides good thermal conduction and mechanical strength. It is RoHS compliant and halogen-free, making it environmentally friendly.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 110 A Rds On - Drain-Source Resistance 8.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 29 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 120 W
Brand Infineon Technologies Configuration Single
Fall Time 12 ns Forward Transconductance - Min 53 S
Height 15.65 mm Length 10 mm
Product Type MOSFET Rise Time 220 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 12 ns Width 4.4 mm
Part # Aliases SP001561720 Unit Weight 0.068784 oz

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    部品の品質保証: 365 日

    返品・返金：90日以内

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