2SJ201-Y
Discontinued Phase-Out Obsolete
在庫：7,131
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : 2SJ201-Y
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パッケージ/ケース : TO-220-3
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ブランド : TOSHIBA
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : 2SJ201-Y データシート (PDF)
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Series : 2SJ201
概要 2SJ201-Y
The 2SJ201-Y is a versatile field-effect power transistor that packs a punch in high-speed power switching applications. With a maximum drain-source voltage of 60V and a continuous drain current of 20A, this N-channel silicon junction transistor means business. Its TO-220 package allows for easy PCB mounting, making it a convenient choice for various electronic projects
主な特長
- Silicon-based construction
- Low power consumption
- Fast switching speed
応用
- Precise LED control
- Industrial automation ready
- Powerful electric vehicles
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 200 V | Id - Continuous Drain Current | 12 A |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 150 W |
| Channel Mode | Enhancement | Series | 2SJ201 |
| Brand | Toshiba | Configuration | Single |
| Fall Time | 150 ns | Height | 15.1 mm |
| Length | 10.16 mm | Product Type | MOSFET |
| Rise Time | 100 ns | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Width | 4.45 mm |
| Unit Weight | 0.068784 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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