IRF3805PBF
Tube packaging of IRF3805PBF N-channel Silicon MOSFET 55V 210A
在庫:9,464
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部品番号 : IRF3805PBF
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パッケージ/ケース : TO-220-3
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ブランド : Infineon Technologies
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IRF3805PBF データシート (PDF)
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Series : IRF3805
概要 IRF3805PBF
In summary, the IRF3805PBF stands out as a top-tier Power Field-Effect Transistor in the market, offering a winning combination of high current capacity, low on-resistance, and robust packaging. Its N-Channel Silicon MOSFET construction, Metal-Oxide Semiconductor technology, and Lead-Free, Plastic Package-3 design make it a versatile and environmentally friendly choice for demanding applications. From industrial automation to renewable energy systems, this FET excels in delivering efficient and reliable power management solutions
主な特長
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HEXFET® | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.3mOhm @ 75A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7960 pF @ 25 V | Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-220AB | Package / Case | TO-220-3 |
Base Product Number | IRF3805 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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