IRFB4115GPBF
Infineon IRFB4115GPBF N-channel MOSFET, 104 A, 150 V HEXFET, 3-Pin TO-220AB
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.984 | $1.98 |
| 200 | $0.768 | $153.60 |
| 500 | $0.741 | $370.50 |
| 1000 | $0.727 | $727.00 |
在庫：7,759
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IRFB4115GPBF
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パッケージ/ケース : TO220-3
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ブランド : International Rectifier
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IRFB4115GPBF データシート (PDF)
概要 IRFB4115GPBF
The IRFB4115GPBF is an essential component for power electronics design, offering a high current rating and low on-resistance for minimal power dissipation. With a Vgs threshold of 3V, this MOSFET provides precise control over the switching behavior, making it suitable for motor drives, DC-DC converters, and other high-power applications. The TO-220AB package facilitates easy installation and thermal management, ensuring optimal performance under heavy load conditions
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
| Id - Continuous Drain Current | 104 A | Rds On - Drain-Source Resistance | 9.3 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 5 V |
| Qg - Gate Charge | 77 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 380 W |
| Channel Mode | Enhancement | Brand | Infineon Technologies |
| Configuration | Single | Height | 15.65 mm |
| Length | 10 mm | Product Type | MOSFET |
| Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Width | 4.4 mm |
| Part # Aliases | SP001572390 | Unit Weight | 0.068784 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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