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IRFH7440TRPBF

Power field-effect transistor

数量 単価(USD) 合計金額
1 $0.489 $0.49
10 $0.403 $4.03
30 $0.361 $10.83
100 $0.318 $31.80
500 $0.293 $146.50
1000 $0.280 $280.00

在庫：9,011

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください IRFH7440TRPBF このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IRFH7440TRPBF

Designed for versatile use in a wide range of applications, the IRFH7440TRPBF power MOSFET stands out with its exceptional performance and reliability. Part of the renowned StrongIRFET family by Infineon, this MOSFET delivers high efficiency, reliability, and thermal performance. Its remarkably low on-state resistance (RDS(on)) of 1.4 mΩ makes it a superior choice for applications where minimizing power losses is critical. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 100A, it is well-equipped to support high-power applications. The compact PQFN package ensures excellent thermal performance and allows for easy integration into various designs. Furthermore, its RoHS compliance and halogen-free composition underscore its commitment to environmental friendliness

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series HEXFET®, StrongIRFET™ Package Bulk
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 138 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4574 pF @ 25 V Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6) Package / Case 8-PowerTDFN
Base Product Number IRFH7440

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

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