IRFD9120PBF
MOSFET P-Channel 100V 1A HVMDIP4 Vishay IRFD9120PBF P-channel MOSFET Transistor, 1 A, 100 V, 4-Pin HVMDIP
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.823 | $0.82 |
10 | $0.681 | $6.81 |
30 | $0.610 | $18.30 |
100 | $0.481 | $48.10 |
500 | $0.439 | $219.50 |
1000 | $0.416 | $416.00 |
在庫:7,746
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IRFD9120PBF
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パッケージ/ケース : DIP-4
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ブランド : Siliconix
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IRFD9120PBF データシート (PDF)
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Series : IRFD9120
概要 IRFD9120PBF
MOSFET P-Channel 100V 1A HVMDIP4 Vishay IRFD9120PBF P-channel MOSFET Transistor, 1 A, 100 V, 4-Pin HVMDIP
主な特長
- High Efficiency Operation Capability
- Fine Control over Power Flow
- Precise Temperature Stabilization
- Rapid Response to Load Changes
- Sufficient Output Current and Voltage
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | DIP-4 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 1 A | Rds On - Drain-Source Resistance | 600 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 18 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 1.3 W |
Channel Mode | Enhancement | Series | IRFD |
Brand | Vishay / Siliconix | Configuration | Single |
Fall Time | 25 ns | Forward Transconductance - Min | 0.71 S |
Height | 3.37 mm | Length | 6.29 mm |
Product Type | MOSFET | Rise Time | 29 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 21 ns |
Typical Turn-On Delay Time | 9.6 ns | Width | 5 mm |
Unit Weight | 0.031537 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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