IRFR15N20DPBF
High-performance N-Channel HEXFET Power MOSFET with 200V rating and low 165mOhm resistance
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.531 | $0.53 |
| 200 | $0.206 | $41.20 |
| 500 | $0.199 | $99.50 |
| 1000 | $0.195 | $195.00 |
在庫：6,213
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IRFR15N20DPBF
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パッケージ/ケース : D-Pak
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Brand : International Rectifier
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Components Classification : Single FETs, MOSFETs
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日付シート : IRFR15N20DPBF データシート (PDF)
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Series : IRFR15N20D
概要 IRFR15N20DPBF
The IRFR15N20DPBF power MOSFET transistor is a versatile component with impressive specifications. With a maximum drain-source voltage of 200V and a continuous drain current of 15A, this transistor is capable of handling high power applications with ease. Its low on-resistance of 0.22 ohms ensures efficient switching, reducing power losses and improving overall system performance
主な特長
- Fully characterized avalanche voltage and current
- Fully characterized capacitance including effective COSS to simplify design
応用
- Power Management
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Mfr | Infineon Technologies |
| Series | HEXFET® | Package | Tube |
| Product Status | Discontinued at Digi-Key | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 10A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V | FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 140W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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