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IRFR5410PBF

Single P-Channel Power MOSFET with a voltage rating of 100V in a D-Pak package

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概要 IRFR5410PBF

The IRFR5410PBF is a power field-effect transistor with a current rating of 13A and a voltage rating of 100V. It features a low on-resistance of 0.205ohm and a P-Channel design. This transistor is built using silicon metal-oxide semiconductor technology and is housed in a TO-252AA package. The IRFR5410PBF is lead-free and made of plastic, making it suitable for environmentally friendly applications

主な特長

  • Fast switching speed and high efficiency
  • Low on-resistance and thermal performance
  • Advanced technology and halogen-free
  • Improved power dissipation and RoHS compliance
  • Suitable for high-efficiency applications and advanced power management
  • High-performance TO-252 packaging and fast switching speed

応用

    Variable frequency drives

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 13 A Rds On - Drain-Source Resistance 205 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 38.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 66 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 46 ns Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Rise Time 58 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type HEXFET Power MOSFET Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 15 ns Width 6.22 mm
Part # Aliases SP001557110 Unit Weight 0.011640 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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