IRG4BC10SD
Trans IGBT Chip N-CH 600V 14A 38mW TO-220AB 3-Pin
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部品番号 : IRG4BC10SD
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パッケージ/ケース : TO-220-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IRG4BC10SD データシート (PDF)
概要 IRG4BC10SD
The IRG4BC10SD is a game-changer in the realm of high power switching applications. Boasting a 600V voltage rating and 20A current rating, this Insulated Gate Bipolar Transistor (IGBT) is the go-to choice for motor control, power supply, and inverter applications where medium to high power is the norm. Its low on-state voltage drop and fast switching speed enable efficient power conversion and minimal power loss, while its rugged design and high di/dt capability ensure reliable operation even in the most demanding conditions. The TO-220AB package facilitates easy mounting and handling during assembly, with its small footprint and high power density making it ideal for designs with limited board space. The IRG4BC10SD also comes equipped with built-in protection features such as overcurrent and overtemperature protection, guaranteeing safe and reliable operation in all circumstances
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 14 A |
| Current - Collector Pulsed (Icm) | 18 A | Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
| Power - Max | 38 W | Switching Energy | 310µJ (on), 3.28mJ (off) |
| Input Type | Standard | Gate Charge | 15 nC |
| Td (on/off) @ 25°C | 76ns/815ns | Test Condition | 480V, 8A, 100Ohm, 15V |
| Reverse Recovery Time (trr) | 28 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB | Base Product Number | IRG4BC10 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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