IRG4BC20SD
TO-220AB-packaged IGBT chip engineered for efficient power switching tasks
在庫:8,953
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部品番号 : IRG4BC20SD
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パッケージ/ケース : TO-220-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IRG4BC20SD データシート (PDF)
概要 IRG4BC20SD
Housed in a TO-220AB package, the IRG4BC20SD is engineered for optimal thermal conductivity, ensuring superior heat dissipation and reliability. Its low VCE(sat) of 1.55V at 20A effectively minimizes power losses, maximizing energy efficiency in various industrial and automotive applications. Furthermore, the device incorporates a built-in soft recovery anti-parallel diode, enhancing ruggedness and safeguarding against voltage spikes
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tube | Product Status | Obsolete |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 19 A |
Current - Collector Pulsed (Icm) | 38 A | Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 10A |
Power - Max | 60 W | Switching Energy | 320µJ (on), 2.58mJ (off) |
Input Type | Standard | Gate Charge | 27 nC |
Td (on/off) @ 25°C | 62ns/690ns | Test Condition | 480V, 10A, 50Ohm, 15V |
Reverse Recovery Time (trr) | 37 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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