IRG4BC30F
IGBT Chip N-Channel 600V 31A 100mW
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部品番号 : IRG4BC30F
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パッケージ/ケース : TO-220-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IRG4BC30F データシート (PDF)
概要 IRG4BC30F
The IRG4BC30F is a powerhouse of a component, boasting a high voltage rating of 600 volts and a current rating of 23 amps. With its unique four-layer design, this Insulated Gate Bipolar Transistor (IGBT) combines the best of both MOSFET and BJT technologies, providing high input impedance and low conduction loss. Its low voltage drop and excellent thermal performance make it an ideal choice for demanding high power switching applications in motor control, power supply, and industrial settings
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 31 A |
| Current - Collector Pulsed (Icm) | 120 A | Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A |
| Power - Max | 100 W | Switching Energy | 230µJ (on), 1.18mJ (off) |
| Input Type | Standard | Gate Charge | 51 nC |
| Td (on/off) @ 25°C | 21ns/200ns | Test Condition | 480V, 17A, 23Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-220-3 | Supplier Device Package | TO-220AB |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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