IRG4BC30UDPBF
IGBT Transistors 600V UltraFast 8-60kHz
在庫:5,098
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部品番号 : IRG4BC30UDPBF
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パッケージ/ケース : TO-220AB
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ブランド : INFINEON
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コンポーネントのカテゴリ : Single IGBTs
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日付シート : IRG4BC30UDPBF データシート (PDF)
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Series : test_f085
概要 IRG4BC30UDPBF
IGBT 600 V 23 A 100 W Through Hole TO-220AB
主な特長
- High Voltage Handling: Capable of handling high voltage levels.
- Fast Switching Speed: Offers fast switching for efficient power control.
- Low Saturation Voltage: Reduces power loss during operation.
- Dual Collector Terminals: Allows for additional current handling capacity.
Note: Comprehensive technical details can be available in the IRG4BC30UDPBF datasheet.
応用
- Power Inverters: Used in inverters for converting DC to AC power.
- Motor Drives: Applied in motor control circuits for efficient speed and direction control.
- Switching Power Supplies: Integrated into circuits for power supply applications.
Functionality
The IRG4BC30UDPBF operates as a high-voltage, high-current switch, allowing efficient control of power flow in electronic circuits.
Equivalents/Alternatives
IRG4BC30U: Similar IGBT transistor with similar specifications.
IXGH30N60B: Alternative IGBT transistor suitable for similar applications.
Usage Guide
- Refer to the official datasheet for comprehensive technical details.
- Connect the transistor pins according to the provided pin configuration for the desired power electronics application.
- Implement suitable gate drive circuitry for precise control.
Frequently Asked Questions
Q: What is the maximum voltage rating of the IRG4BC30UDPBF?
A: Refer to the datasheet for information on the maximum voltage rating.
Q: How to calculate power loss in the IGBT?
A: Consult the datasheet for guidelines on calculating power loss under different operating conditions.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | IRG4BC30UDPBF | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
Case Connection | COLLECTOR | Collector Current-Max (IC) | 23 A |
Collector-Emitter Voltage-Max | 600 V | Configuration | SINGLE WITH BUILT-IN DIODE |
Fall Time-Max (tf) | 130 ns | Gate-Emitter Thr Voltage-Max | 6 V |
Gate-Emitter Voltage-Max | 20 V | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 100 W |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 300 ns |
Turn-on Time-Nom (ton) | 62 ns |
同等部品
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
IRG4BC30UDPBF 同等部品
For the IRG4BC30UDPBF コンポーネント, これらの交換部品や代替部品をご検討ください。
モデル | メーカー | パッケージ/ケース | 説明 |
---|---|---|---|
IRG4BC30U | Similar IGBT transistor with similar specifications | ||
IXGH30N60B | Alternative IGBT transistor suitable for similar applications |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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