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IRG4BC40SPBF

Insulated Gate Bipolar Transistor

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概要 IRG4BC40SPBF

IGBT 600 V 60 A 160 W Through Hole TO-220AB

主な特長

  • Insulated Gate Bipolar Transistor (IGBT): The IRG4BC40SPBF is an IGBT, a semiconductor device combining the features of a MOSFET and a bipolar transistor. It is commonly used in high-power applications for its fast switching and low saturation voltage.
  • High Power Rating: With a high power rating, the IRG4BC40SPBF is capable of handling substantial electrical loads, making it suitable for power amplifiers and high-power systems.
  • Fast Switching Speed: The IGBT is known for its fast switching capabilities, contributing to efficient power conversion in various applications.
  • Low Saturation Voltage: The low saturation voltage of the IRG4BC40SPBF minimizes power losses during conduction, improving overall efficiency.

Note: Comprehensive technical details can be found in the IRG4BC40SPBF datasheet.

応用

  • Power Inverters: The IRG4BC40SPBF is commonly used in power inverters for converting DC to AC power in applications like motor drives and uninterruptible power supplies (UPS).
  • Motor Drives: Suitable for controlling motors in industrial and automotive applications due to its high power handling and efficient switching.
  • Switching Power Supplies: Used in high-power switching power supplies for efficient power conversion.
  • Induction Heating: The IGBT's fast switching speed makes it suitable for applications like induction heating.


Functionality


The IRG4BC40SPBF functions as an IGBT, allowing the controlled flow of electrical current from the collector to the emitter when the gate signal is applied. This on/off switching capability enables precise control in various power applications.


Usage Guide

  • Gate Driving: Proper gate driving is crucial for optimal performance. Refer to the datasheet for recommended gate drive conditions and circuitry.
  • Heat Dissipation: In high-power applications, proper heat sinking is recommended to manage the generated heat and ensure reliable operation.


Equivalents


For similar functionalities, consider these alternatives to the IRG4BC40SPBF:


IRG4BC30SPBF: A similar IGBT with a slightly lower current rating.
IRG4BC20SPBF: Another alternative with lower current and power ratings.


Frequently Asked Questions


Q: What is the maximum operating temperature of the IRG4BC40SPBF?
A: Refer to the datasheet for the specific maximum operating temperature under recommended operating conditions.


Q: Can the IRG4BC40SPBF be used in high-frequency applications?
A: While IGBTs are not typically designed for high-frequency applications, the IRG4BC40SPBF can be suitable for moderate-frequency switching applications. Consult the datasheet for detailed information.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid IRG4BC40SPBF Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Date Of Intro 1997-04-17
Samacsys Manufacturer Infineon Case Connection COLLECTOR
Collector Current-Max (IC) 60 A Collector-Emitter Voltage-Max 600 V
Configuration SINGLE Fall Time-Max (tf) 570 ns
Gate-Emitter Thr Voltage-Max 6 V Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W Qualification Status Not Qualified
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1940 ns Turn-on Time-Nom (ton) 44 ns

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