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IRG4IBC30W

IRG4IBC30W: A cutting-edge Trans IGBT Chip optimized for power electronics

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概要 IRG4IBC30W

With its low saturation voltage and fast switching speed, the IRG4IBC30W IGBT delivers superior performance while minimizing power losses. Its rugged design and compact TO-220 package facilitate easy integration into existing circuit designs, while built-in protection features such as overcurrent and overtemperature protection ensure dependable operation in challenging environments. This IGBT is the go-to choice for high power switching applications, offering unparalleled efficiency and reliability

主な特長

  • Fast response time for reliable operation
  • Silicon carbide MOSFET for low losses
  • Enhanced thermal performance for rugged use
  • High-voltage rating for safe operation
  • EPOI substrate for improved reliability

応用

  • High-power applications
  • Household appliances
  • Consumer electronics

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Packaging Tube Part Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 17 A
Current - Collector Pulsed (Icm) 92 A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Power - Max 45 W Switching Energy 130µJ (on), 130µJ (off)
Input Type Standard Gate Charge 51 nC
Td (on/off) @ 25°C 25ns/99ns Test Condition 480V, 12A, 23Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Package / Case TO-220-3 Full Pack Supplier Device Package PG-TO220-FP
Base Product Number IRG4IBC

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