IRG4PC50WPBF
Power transistor IRG4PC50WPBF
在庫：5,370
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部品番号 : IRG4PC50WPBF
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パッケージ/ケース : TO247-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IRG4PC50WPBF データシート (PDF)
概要 IRG4PC50WPBF
Meet the IRG4PC50WPBF, an Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies designed for high power applications. With a maximum voltage rating of 1200V and a continuous current rating of 46A, this IGBT delivers exceptional performance in motor control, power supplies, and inverters. Its low on-state voltage of 2.2V and low switching energy of 0.27mJ ensure efficient operation and reliability
主な特長
- This IGBT module features a high current rating and low noise operation.
- Its compact design makes it suitable for space-constrained applications.
応用
- Excellent for high-power applications
- Dependable power transistor
- Top choice for efficiency
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.3 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 55 A |
| Pd - Power Dissipation | 200 W | Minimum Operating Temperature | - 55 C |
| Brand | Infineon Technologies | Height | 20.7 mm |
| Length | 15.87 mm | Product Type | IGBT Transistors |
| Factory Pack Quantity | 400 | Subcategory | IGBTs |
| Width | 5.31 mm | Unit Weight | 1.340411 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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