IRG4PH20KD
The IRG4PH20KD stands out as a sophisticated transistorized IGBT chip
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部品番号 : IRG4PH20KD
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パッケージ/ケース : TO-247-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IRG4PH20KD データシート (PDF)
概要 IRG4PH20KD
The IRG4PH20KD Insulated Gate Bipolar Transistor is a powerhouse in high power switching applications. With a breakdown voltage of 1200V and a continuous collector current of 40A, this N-Channel IGBT is designed to handle tough tasks with ease. Its maximum junction temperature of 150°C ensures reliable performance even in high temperature environments, making it a versatile choice for various applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Bag | Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 11 A |
| Current - Collector Pulsed (Icm) | 22 A | Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
| Power - Max | 60 W | Switching Energy | 620µJ (on), 300µJ (off) |
| Input Type | Standard | Gate Charge | 28 nC |
| Td (on/off) @ 25°C | 50ns/100ns | Test Condition | 800V, 5A, 50Ohm, 15V |
| Reverse Recovery Time (trr) | 51 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AC | Base Product Number | IRG4PH20 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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