IRG4PH30K
IRG4PH30K Insulated Gate Bipolar Transistor (IGBT) rated at 20A and 1200V in TO247 package
在庫：5,077
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部品番号 : IRG4PH30K
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パッケージ/ケース : TO247-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IRG4PH30K データシート (PDF)
概要 IRG4PH30K
Housed in a TO-247 package, the IRG4PH30K offers excellent thermal performance, allowing for reliable operation even in demanding conditions. The TO-247 package also facilitates easy mounting onto a heat sink for effective heat dissipation, ensuring optimal performance at all times. Additionally, the low on-state voltage drop of 1.8V at 75A minimizes power losses and enhances overall efficiency in the circuit
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Bag | Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 40 A | Vce(on) (Max) @ Vge, Ic | 4.2V @ 15V, 10A |
| Power - Max | 100 W | Switching Energy | 640µJ (on), 920µJ (off) |
| Input Type | Standard | Gate Charge | 53 nC |
| Td (on/off) @ 25°C | 28ns/200ns | Test Condition | 960V, 10A, 23Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-247-3 | Supplier Device Package | TO-247AC |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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