SIHG20N50C-E3
|
This N-channel TO-247AC-3 MOSFET, SIHG20N50C-E3, complies with the RoHS directive, ensuring environmental friendliness |
Siliconix |
4,407 |
|
IXTX200N10L2
|
High-power N-channel MOSFET with 3-pin configuration and isolated tab |
Ixys Integrated Circuits Division |
9,676 |
|
IRFP7530PBF
|
Tube Packaged N-Channel Silicon MOSFET, Suitable for High Power Applications with 60V Voltage Rating and 281A Maximum Current Rating |
Infineon Technologies |
5,552 |
|
IRFP450PBF
|
MOSFET designed with a planar structure for voltages greater than or equal to 100V |
Siliconix |
7,374 |
|
IRG4PH50UPBF
|
IRG4PH50UPBF by International Rectifier |
Infineon Technologies |
8,606 |
|
IRFP4310ZPBF
|
TO-247AC packaged N-Channel MOSFET suitable for use in a variety of high-power electronic circuit designs |
Infineon Technologies |
7,898 |
|
SIHG73N60E-GE3
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SIHG73N60E-GE3 Vishay MOSFETs Transistor N-CH 600V 73A TO-247AC |
Siliconix |
9,811 |
|
SPW47N60C3FKSA1
|
SPW47N60C3FKSA1 MOSFET |
Infineon Technologies |
5,226 |
|
VS-40TPS12-M3
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VISHAY - VS-40TPS12-M3 - Thyristor, 1.2 kV, 150 mA, 35 A, 55 A, TO-247AC, 3 Pins |
Siliconix |
5,173 |
|
HGTG20N60C3
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HGTG20N60C3 is an Insulated Gate Bipolar Transistor used in electronic devices |
Onsemi |
5,310 |
|
IXXH50N60C3D1
|
600V/100Amp XPT IGBT C3-Class IGBT Transistors CoPacked |
Ixys Integrated Circuits Division |
6,483 |
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DSSK50-01A
|
DIODE SCHOTTKY IXYS TO247AD 100V 2*25A |
Ixys Integrated Circuits Division |
6,154 |
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IXTH96P085T
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TO-247 MOSFET by LITTELFUSE - IXTH96P085T, P-CH, 85V, 96A |
Ixys Integrated Circuits Division |
8,137 |
|
IXTH130N10T
|
High-power N-type MOSFET rated at 100V and 130A |
Ixys Integrated Circuits Division |
7,372 |
|
IXTH30N60L2
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N-channel MOSFET transistor capable of handling 30A at 600V in TO-247AD package |
Ixys Integrated Circuits Division |
7,767 |
|
IXTH140P05T
|
IXTH140P05T MOSFETs in TO-247 package, meeting ROHS requirements |
Ixys Integrated Circuits Division |
4,879 |
|
IXFX27N80Q
|
High Performance N-Channel MOSFET Discrete Component, 27A 800V |
Ixys Integrated Circuits Division |
6,862 |
|
IXTH10P50P
|
P-Channel TO-247 MOSFET |
Ixys Integrated Circuits Division |
9,822 |
|
IXTX90P20P
|
P-Channel 200 V 90 A 44 mOhm Through Hole PolarP Power Mosfet -PLUS247 |
Ixys Integrated Circuits Division |
8,504 |
|
IKQ75N120CH3XKSA1
|
IGBT Transistor with 1.2kV Voltage Rating, 75A Current, and 256W Power Dissipation in TO247-3 Package |
Infineon Technologies |
6,544 |
|
IRFP22N60KPBF
|
Trans MOSFET N-CH 600V 22A |
Siliconix |
3,782 |
|
IKQ120N60TXKSA1
|
Trans IGBT Chip N-Channel 600V 160A 833W TO-247 |
Infineon Technologies |
8,993 |
|
IXTX32P60P
|
32 Amps MOSFET with 600V and 0.350 Rds |
Ixys Integrated Circuits Division |
5,397 |
|
STW17N62K3
|
N-Channel Silicon Power MOSFET with 15A current rating, 620V voltage rating, and 0.38ohm resistance in a TO-247 package |
Stmicroelectronics |
9,613 |
|
IXFH14N100Q2
|
IXFH14N100Q2 - MOSFET with 14 Amps and 1000V, featuring 0.90 Rds |
Ixys Integrated Circuits Division |
6,047 |
|
SIHG22N60E-GE3
|
SIHG22N60E-GE3 MOSFET: Featuring 600V Vds and 30V Vgs, encapsulated in a TO-247AC package |
Siliconix |
6,807 |
|
IXFH50N50P3
|
Field-Effect Transistor for Power Applications - IXFH50N50P3 |
Ixys Integrated Circuits Division |
8,641 |
|
DSEE30-12A
|
Rectifier Diode, 30A, 1200V V(RRM), Silicon, TO-247AD |
Ixys Integrated Circuits Division |
7,042 |
|
IXFX420N10T
|
N-channel MOSFET with a voltage rating of 100V and a current rating of 420A in a PLUS247-3 package |
Ixys Integrated Circuits Division |
7,272 |
|
IXFX230N20T
|
230A 200V MOSFET |
Ixys Integrated Circuits Division |
9,446 |
|
IRFP460BPBF
|
Vishay IRFP460BPBF N-channel MOSFET Transistor, 20 A, 500 V, 3-Pin TO-247AC |
Siliconix |
9,174 |
|
IRFPE50PBF
|
N-channel MOSFET,IRFPE50 7.8A 600V |
Siliconix |
6,099 |
|
APT40SM120B
|
1.2KV SiC N-channel Power MOSFET with a current rating of 41A and TO-247 package |
Microchip Technology |
5,012 |
|
IXTX110N20L2
|
960W Power Dissipation |
Ixys Integrated Circuits Division |
5,757 |
|
IXTH16P60P
|
Transistor MOSFET P-channel with 600V and 16A in TO-247AD package |
Ixys Integrated Circuits Division |
8,175 |
|
IXXH75N60B3D1
|
Trans IGBT Chip |
Ixys Integrated Circuits Division |
7,675 |
|
IXFX64N60P
|
1-Element PLUS247 |
Ixys Integrated Circuits Division |
8,133 |
|
IXFH60N50P3
|
High voltage MOSFET with 60A current rating |
Ixys Integrated Circuits Division |
7,638 |
|
IRFPS37N50APBF
|
Transistor MOSFET N-CH 500V 36A 3-Pin TO-274AA T/R |
Infineon Technologies |
6,880 |
|
IXFH46N65X2
|
TO-247AD N-Ch Ultra Junction X2 Class Power MOSFET |
Ixys Integrated Circuits Division |
5,358 |
|
IXFH34N65X2
|
Transistor for high-voltage power switching |
Ixys Integrated Circuits Division |
7,373 |
|
TIP140G
|
TIP140G - Bipolar Power Transistor rated for 10 A and 60 V, NPN Darlington configuration |
Onsemi |
6,938 |
|
MUR3020WTG
|
The Ultrafast Rectifier is ideal for applications in switching power supplies and inverters |
Onsemi |
7,341 |
|
MBR6045WTG
|
60A, 45V Schottky Barrier Rectifier in a TO-247 package with 30-tube packaging |
Onsemi |
5,116 |
|
IXFH74N20P
|
74A I(D) Power Field-Effect Transistor, 200V, 0.034ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN |
Ixys Integrated Circuits Division |
6,654 |
|
IXFH42N20
|
Described as a 200V N-channel MOSFET, IXFH42N20 boasts a hefty 42A current capacity and comes in a TO-247AD package with 3 pins |
Ixys Integrated Circuits Division |
6,945 |
|
IXFH75N10
|
TO-247AD MOSFETs with ROHS |
Ixys Integrated Circuits Division |
9,893 |
|
IXFH20N80P
|
The MOSFET is commonly used for high power switching and amplification in electronic circuits |
Ixys Integrated Circuits Division |
6,262 |
|
IXFH26N60Q
|
6 ampere electronic component, 600 volt MOSFET |
Ixys Integrated Circuits Division |
5,648 |
|
IXFH36N60P
|
600V N-channel MOSFET with 36A current handling capacity |
Ixys Integrated Circuits Division |
7,058 |
|