IRGBC20FD2
IGBT 600V 16A Through Hole TO-220AB
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部品番号 : IRGBC20FD2
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パッケージ/ケース : TO-220-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IRGBC20FD2 データシート (PDF)
概要 IRGBC20FD2
Introducing the IRGBC20FD2, a state-of-the-art 5V 20A Insulated Gate Bipolar Transistor (IGBT) designed to excel in high power switching applications. Encased in a TO-220 package, this powerhouse features a remarkably low VCE(sat) voltage of 1.55V at a collector current of 20A, ensuring unparalleled power conversion efficiency. Boasting a maximum operating temperature of 150°C, the IRGBC20FD2 delivers unwavering performance even in the most demanding environments. Its high input impedance facilitates easy driving with low power signals, while the typical turn-off time of 220ns guarantees swift switching speeds for enhanced efficiency. Equipped with advanced power semiconductor technology, this IGBT offers exceptional power density and minimal power dissipation. With a breakthrough breakdown voltage of 600V, the IRGBC20FD2 stands as a beacon of robustness and reliability in high voltage applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 16 A |
| Input Type | Standard | Mounting Type | Through Hole |
| Package / Case | TO-220-3 | Supplier Device Package | TO-220AB |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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