IRGR3B60KD2PBF
Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel
在庫：7,624
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部品番号 : IRGR3B60KD2PBF
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パッケージ/ケース : TO-252-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IRGR3B60KD2PBF データシート (PDF)
概要 IRGR3B60KD2PBF
IGBT NPT 600 V 7.8 A 52 W Surface Mount TO-252AA (DPAK)
主な特長
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- Lead-Free
- Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| IGBT Type | NPT | Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 7.8 A | Current - Collector Pulsed (Icm) | 15.6 A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 3A | Power - Max | 52 W |
| Switching Energy | 62µJ (on), 39µJ (off) | Input Type | Standard |
| Gate Charge | 13 nC | Td (on/off) @ 25°C | 18ns/110ns |
| Test Condition | 400V, 3A, 100Ohm, 15V | Reverse Recovery Time (trr) | 77 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Supplier Device Package | TO-252AA (DPAK) |
| Base Product Number | IRGR3B60KD2PBF |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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