IRGS4065PBF
Insulated-Gate Bipolar Transistor
在庫：6,899
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IRGS4065PBF
-
パッケージ/ケース : TO-263-3
-
Brand : Infineon Technologies
-
Components Classification : Single IGBTs
-
日付シート : IRGS4065PBF データシート (PDF)
概要 IRGS4065PBF
IGBT Trench 300 V 70 A 178 W Surface Mount D2PAK
主な特長
- Advanced Trench IGBT Technology
- Optimized for Sustain and Energy Recovery circuits in PDP applications
- Low VCE(on)and Energy per Pulse (EPULSE™) for improved panel efficiency
- High repetitive peak current capability
- Lead Free package
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| IGBT Type | Trench | Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector (Ic) (Max) | 70 A | Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 70A |
| Power - Max | 178 W | Input Type | Standard |
| Gate Charge | 62 nC | Td (on/off) @ 25°C | 30ns/170ns |
| Test Condition | 180V, 25A, 10Ohm | Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IRF3415PBF
43 amp current rating
IRF7324TRPBF
Silicon P-Type MOSFET with a Maximum Voltage of 20V and Current Handling Capability of 9A
IRF7832TRPBF
8-pin surface-mount N-channel MOSFET with a 30-volt, 20-amp rating
IRF7831TRPBF
30V N Channel MOSFET with 21A current rating and 3.6mΩ resistance at 10V
IRFB3307ZPBF
Tube Packaging for IRFB3307ZPBF N-Channel Silicon MOSFET with 3 Pins and a Tab
IRFB4310ZPBF
100 V HEXFET Infineon IRFB4310ZPBF N-channel MOSFET, 127 A, 3-Pin TO-220AB
IRFHM8326TRPBF
Single N-Channel 30 V 4.7 mOhm 39 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
IRFP054NPBF
MOSFET N-Channel 55V 81A TO247AC International Rectifier IRFP054NPBF N-channel MOSFET Transistor, 81 A, 55 V, 3-Pin TO-247AC
IRFP4227PBF
Part number IRFP4227PBF
IRFR7540TRPBF
Power Field-Effect Transistor
IPZ40N04S58R4ATMA1
Field-effect transistor suitable for amplifying signals in systems with voltages between 20V and 40V
BTA16-600CW3G
BTA16-600CW3G: ISO TO220 TRIAC rated at 16A with 35mA sensitivity
IRGBC30F
IRGBC30F is a Trans IGBT Chip with a voltage rating of 600V and a maximum current rating of 31A
IRFR9220TRPBF
Vishay IRFR9220TRPBF P-channel MOSFET Transistor, 3.6 A, -200 V, 3-Pin TO-252
STD10PF06T4
TO-252 package P-Channel power MosFet from STD10PF06 Series
SI4943BDY-T1-E3
Vishay SI4943BDY-T1-E3 P-channel MOSFET Module, 6.3 A, -20 V, 8-Pin SOIC
SBC847BPDW1T1G
SBC847BPDW1T1G product details: Bipolar Transistors - BJT ROHS, 45V 380mW 200@2mA, 5V 100mA NPN+PNP SOT-363-6
BC847BVN,115
BC847BVN,115 is a dual NPN and PNP bipolar transistor, capable of handling voltages up to 45V and power dissipation of 300mW
CPC5602CTR
MOSFETs SOT-223 ROHS
DMHC3025LSD-13
30V Enhancement MOSFET H-Bridge SOIC8 Diodes Inc DMHC3025LSD-13 Quad N/P-channel MOSFET Transistor, 8-Pin SOIC