ISL9V3040D3S
Motor Motion Ignition Controllers Drivers
在庫:5,923
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : ISL9V3040D3S
-
パッケージ/ケース : TO252-2
-
ブランド : Onsemi
-
コンポーネントの分類 : Single IGBTs
-
日付シート : ISL9V3040D3S データシート (PDF)
概要 ISL9V3040D3S
Designed for efficiency and performance, the ISL9V3040D3S power MOSFET is ideal for a wide range of power management applications. With a 400V drain-source voltage rating and 17A continuous drain current, it can effectively handle high-current, high-voltage scenarios. Its low on-resistance of 0.11 ohms minimizes power losses and enhances overall efficiency. The thermally efficient package design ensures reliable operation in high-power scenarios, with low thermal resistance to effectively dissipate heat and prevent overheating, contributing to long-term reliability. Furthermore, its fast switching speed and high pulse current capability make it suitable for high-frequency switching applications. Additionally, the MOSFET is equipped with ESD protection, adding to its robustness and reliability in challenging operating conditions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | Motor / Motion / Ignition Controllers & Drivers | RoHS | Details |
Product | Electronic Ignition Drivers | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 175 C | Mounting Style | SMD/SMT |
Package / Case | TO-252AA | Brand | onsemi / Fairchild |
Product Type | Motor / Motion / Ignition Controllers & Drivers | Factory Pack Quantity | 1800 |
Subcategory | PMIC - Power Management ICs | Unit Weight | 0.056438 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
ISC011N06LM5ATMA1
Transistor MOSFET N-channel with 60V voltage rating and 37A current rating in an 8-Pin TDSON EP package, supplied on tape and reel
ISL9V5036S3ST
Trans IGBT Chip N-CH 360V 46A 250W Automotive 3-Pin(2+Tab) D2PAK T/R
ISL9V3040P3
Trans IGBT Chip N-CH 390V 21A 150W Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube
ISS17EP06LMXTSA1
Compact MOSFETs ideal for miniaturized electronics
SIS176LDN-T1-GE3
VISHAY - SIS176LDN-T1-GE3 - Power MOSFET, N Channel, 70 V, 42.3 A, 0.0086 ohm, PowerPAK 1212, Surface Mount
SIS407ADN-T1-GE3
P-Ch PowerPAK1212 Cu 20V 9 [email protected]
SIS407DN-T1-GE3
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
SIS438DN-T1-GE3
SIS438DN-T1-GE3: Power-efficient Single N-Channel MOSFET, Suitable for Surface Mounting, with a 20V Voltage Tolerance and 14
SIS427EDN-T1-GE3
MOSFET -30V Vds 25V Vgs PowerPAK 1212-8
SISA40DN-T1-GE3
High-performance MOSFET suitable for applications requiring 20V Vds and 12V Vgs capabilities
AOTF2210L
Power transistor for electronic circuits
MRF8S9220HR3
N-Channel Power LDMOS Transistor with 70V Rating in NI-780 Package
BTA16-600CRG
TRIAC 600V 16A(RMS) 168A 3-Pin(3+Tab) TO-220AB Tube
NTHS4101PT1G
NTHS4101PT1G is a P-channel MOSFET capable of handling currents up to -6.7A at a voltage of -20V
2SC5888
Sanyo Transistor 2SC5888
SSM3J351R,LF
MOSFET optimized for small-signal operation, featuring -3.5A drain current and -60V drain-source voltage capability
MJD31CG
The product MJD31CG is a NPN bipolar power transistor capable of handling up to 3
DTC114YSATP
Bipolar Transistor, NPN, Silicon, Small Signal, 0.1A I(C), 50V V(BR)CEO, SC-72
SI1401EDH-T1-GE3
MOSFET with -12V Drain-Source Voltage and 10V Gate-Source Voltage, in SC70-6 Package
CPC5602C
350V N-channel MOSFET