SISA40DN-T1-GE3
High-performance MOSFET suitable for applications requiring 20V Vds and 12V Vgs capabilities
在庫：9,428
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SISA40DN-T1-GE3
-
パッケージ/ケース : PowerPAK®1212-8
-
ブランド : Vishay Siliconix
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : SISA40DN-T1-GE3 データシート (PDF)
-
Series : SISA40DN
概要 SISA40DN-T1-GE3
N-Channel 20 V 43.7A (Ta), 162A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
主な特長
- Fast switching speed and low loss
- High current handling capability
- Durable and reliable performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | TrenchFET® Gen IV | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 43.7A (Ta), 162A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V | Rds On (Max) @ Id, Vgs | 1.1mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Vgs (Max) | +12V, -8V | Input Capacitance (Ciss) (Max) @ Vds | 3415 pF @ 10 V |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 | Base Product Number | SISA40 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
SI2393DS-T1-GE3
P-Channel 30-V (D-S) MOSFET SOT-23 , 22.7 m @ 10V m @ 7.5V 33 m @ 4.5V
SI4126DY-T1-GE3
MOSFET N-CH 30V 39A 8-SOIC
SI2333DDS-T1-GE3
SOT-23 MOSFET designed for P Channel operation, featuring a 12V voltage rating and a resistance of 28mΩ at 4.5V for currents up to 6A
SI7157DP-T1-GE3
-20V Vds and 12V Vgs MOSFET suitable for power management tasks
SI2305DS-T1-E3
RoHS Compliant Package-3
SI2323DS-T1-GE3
Description: ROHS compliant SOT-23 MOSFETs capable of handling 4.7A current at 750mW power dissipation
SI4410BDY-T1-E3
Small-signal Silicon MOSFET SI4410BDY-T1-E3, featuring an N-channel design, rated for 7500 mA and 30 V
SI7905DN-T1-GE3
MOSFET SI7923DN-GE3 suggested as a substitute for SI7905DN-T1-GE3
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 MOSFET N-channel 25 volts 100 amps TDSON-8
SI1077X-T1-GE3
Si1077X Series 20 V 1.4 A 78 mOhm Surface Mount P-Channel Mosfet - SC89-6
TIC246N
TO-220 package triac for controlling high power applications
IRFB52N15DPBF
60A 150V MOSFET with 32mOhm on-resistance and 60nC gate charge
MCAC80P06Y-TP
Transistor with P-Channel 60V 80A Rating in 8-Pin DFN EP Package
DMN3200U-7
MOSFET 650mW 30Vdss
MRF8S9220HR3
N-Channel Power LDMOS Transistor with 70V Rating in NI-780 Package
KSA1381ESTU
Fairchild KSA1381ESTU TU transistor
MRF6V2010NR1
RF MOSFET Transistors VHV6 10W TO270-2N
ZXTP2027FTA
Product ZXTP2027FTA is a general-purpose bipolar junction transistor (BJT) designed with a PNP configuration
IRF7205TRPBF
P-MOSFET transistor with a unipolar design, capable of handling up to -30V and -4.6A, with a power dissipation rating of 2.5W, packaged in SO8 format
BSM100GB120DLCK
Module-7 Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel