IXBN75N170A

BiMOSFETs, such as the IXBN75N170A, represent a cutting-edge fusion of MOSFETs and IGBTs, offering a host of advantages due to their innovative design and manufacturing processes. These high voltage devices are particularly well-suited for parallel operation thanks to the favorable characteristics of their saturation voltage and forward voltage drop. The intrinsic body diode within the BiMOSFET not only provides a needed layer of protection but also serves as a crucial element in managing inductive load currents during device turn-off, thus safeguarding against potentially damaging voltage transients. By leveraging non-epitaxial construction methods and state-of-the-art fabrication techniques, BiMOSFETs have carved out a niche as robust and reliable components that cater to diverse industrial applications

主な特長

• Reduced noise emission
• Minimized distortion
• Improved frequency response
• Simplified control

応用

• High voltage transformers
• Pulsed power systems
• Electric vehicle chargers