IXYH40N120C4
IGBT Transistors IGBT DISCRETE
在庫:7,405
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- 365日の品質保証
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部品番号 : IXYH40N120C4
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パッケージ/ケース : TO-247-3
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Brand : Littelfuse
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Components Classification : Single IGBTs
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日付シート : IXYH40N120C4 データシート (PDF)
概要 IXYH40N120C4
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.
主な特長
- Low on-state voltages Vcesat
- Optimized for high switching frequencies up to 60kHz
- Positive thermal coefficient of Vcesat
- International standard packages
応用
- Battery chargers
- Power inverters
- Power Factor Correction (PFC) circuits
- Uninterruptible power supplies (UPS)
- Welding machines
- Advantages:
- Ideal for high power density and high inrush currents, low loss applications
- Hard-switching capable
- Easy paralleling of devices
- Reduced gate driver requirements
- Ease of replacement and availability of isolation package
- Low gate drive requirements
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Status | Active | VCES - Collector-Emitter Voltage (V) | 1200 |
Collector Current @ 25 ℃ (A) | 120 | VCE(sat) - Collector-Emitter Saturation Voltage (V) | 2.5 |
Fall Time [Inductive Load] (ns) | 80 | Configuration | Single |
Package Type | TO-247 | Thermal resistance [junction-case] [IGBT] (K/W) | 0.22 |
Turn-off Energy @ 125 ℃ (mJ) | 2.65 | Collector Current @ 110 ℃ (A) | 40 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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