JANSR2N7269
MOSFET Transistor, N-Channel, TO-254AA - Product Description
在庫：5,258
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : JANSR2N7269
-
パッケージ/ケース : TO-254-3
-
ブランド : Microsemi Corporation
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : JANSR2N7269 データシート (PDF)
概要 JANSR2N7269
The JANSR2N7269 stands out as a pinnacle of reliability in the realm of silicon power rectifier diodes. Crafted with precision by the esteemed Microsemi Corporation, this diode offers unmatched resilience and performance in challenging scenarios. Boasting a reverse voltage threshold of 200 volts, a forward current capacity of 3 amps, and a negligible forward voltage drop of 1.2 volts at 3 amps, the JANSR2N7269 is a powerhouse of efficiency. Its hermetically sealed DO-41 package ensures protection against external elements, while its wide temperature tolerance makes it a versatile choice for diverse applications. Dominate high-stakes environments with the JANSR2N7269's exceptional surge current handling, rapid reverse recovery time, and minimal leakage current, backed by its radiation-resistant design for unwavering performance. Elevate your systems with the rock-solid reliability of the JANSR2N7269
主な特長
- Single Event Effect (SEE) Hardened
- Low RDS(on)
- Low Total Gate Charge
- Simple Drive Requirements
- Ease of Paralleling
- Hermetically Sealed
- Ceramic Eyelets
- Light Weight
- ESD Rating: Class 3A per MIL-STD-750, Method 1020
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tray | Product Status | Obsolete |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V | Rds On (Max) @ Id, Vgs | 110mOhm @ 26A, 12V |
| Vgs(th) (Max) @ Id | 4V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 12 V |
| Vgs (Max) | ±20V | Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C | Grade | Military |
| Qualification | MIL-PRF-19500/603 | Mounting Type | Through Hole |
| Supplier Device Package | TO-254AA | Package / Case | TO-254-3, TO-254AA |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
JANTX2N6898
MOSFET transistor with P-channel, 3 pins, and tab in TO-3 package
JANTX2N6766
Transistor MOSFET N-channel with a voltage rating of 200V and a current handling capacity of 30A in a TO-3 package
JANTXV2N6796
TO-205AF TO-39 Package
JANTXV2N6796U
Transistorized Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for N-type operation
JANTX2N6802
channel mosfet transistor to-39 jantx2n6802
JANTX2N7236
JANTX2N7236 offers a single P-channel Hi-Rel MOSFET with a -100V rating, enclosed in a TO-254AA package. The hermetic packaging ensures reliability
JANTX2N7236U
Enjoy the benefits of hermetic packaging with the JANTX2N7236U, ensuring reliability in demanding applications
JANTX2N6764
Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3
JANTX2N7228
TO-254AA packaged JANTX2N7228: Offering high voltage capabilities and reliability
NPT25100B
RF Power Transistor NPT25100B Specifications"
MRFE6S9160HS
Single N-CDMA RF power transistor by NXP Semiconductors, operating at 880 MHz with 35 W average power and 28 V
IXGH40N60B2
IXYS IXGH40N60B2 IGBT
IRGB4062DPBF
Air Conditioner
NGTB03N60R2DT4G
NGTB03N60R2DT4G: TO-252-2(DPAK) IGBTs compliant with ROHS standards
SI7454DP-T1-E3
PowerPAK SO 8-pin package containing a N-channel MOSFET transistor rated for 100V and 5A
IXTK140N20P
TO-264 MOSFETs compliant with RoHS
EM6K33T2R
EM6K33T2R - Transconductance field-effect transistor
IRFS4620TRLPBF
TO-263AB packaged MOSFET with N-channel polarity, 200V source voltage, and 24A continuous drain current capability
IXFK230N20T
MOSFETs TO-264AA ROHS