NGTB03N60R2DT4G
NGTB03N60R2DT4G: TO-252-2(DPAK) IGBTs compliant with ROHS standards
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.500 | $0.50 |
| 10 | $0.412 | $4.12 |
| 30 | $0.375 | $11.25 |
| 100 | $0.326 | $32.60 |
| 500 | $0.306 | $153.00 |
| 1000 | $0.294 | $294.00 |
在庫：7,493
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : NGTB03N60R2DT4G
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パッケージ/ケース : DPAK-3
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Brand : Onsemi
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Components Classification : Single IGBTs
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日付シート : NGTB03N60R2DT4G データシート (PDF)
概要 NGTB03N60R2DT4G
Additionally, the NGTB03N60R2DT4G boasts exceptional ruggedness and reliability, making it a standout choice for mission-critical applications. Its low saturation voltage and superior thermal performance further enhance its appeal, allowing for sustained high-performance operation under challenging conditions. Housed in a compact TO-220AB package, this IGBT is designed for seamless integration into existing circuit designs, offering convenience and flexibility in implementation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | Technology | Si |
| Package / Case | DPAK-3 | Mounting Style | SMD/SMT |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 1.7 V | Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Continuous Collector Current at 25 C | 9 A | Pd - Power Dissipation | 49 W |
| Maximum Operating Temperature | + 175 C | Brand | onsemi |
| Continuous Collector Current Ic Max | 4.5 A | Gate-Emitter Leakage Current | +/- 100 nA |
| Product Type | IGBT Transistors | Factory Pack Quantity | 2500 |
| Subcategory | IGBTs | Unit Weight | 0.012346 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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